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High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2
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文摘
Two-dimensional (2D) semimetals beyond graphene have been relatively unexplored in the atomically thin limit. Here, we introduce a facile growth mechanism for semimetallic WTe2 crystals and then fabricate few-layer test structures while carefully avoiding degradation from exposure to air. Low-field electrical measurements of 80 nm to 2 μm long devices allow us to separate intrinsic and contact resistance, revealing metallic response in the thinnest encapsulated and stable WTe2 devices studied to date (3–20 layers thick). High-field electrical measurements and electrothermal modeling demonstrate that ultrathin WTe2 can carry remarkably high current density (approaching 50 MA/cm2, higher than most common interconnect metals) despite a very low thermal conductivity (of the order ∼3 Wm–1 K–1). These results suggest several pathways for air-stable technological viability of this layered semimetal.

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