Flexible Nanoporous WO3–x Nonvolatile Memory Device

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• 作者：Yongsung Ji ; Yang Yang ; Seoung-Ki Lee ; Gedeng Ruan ; Tae-Wook Kim ; Huilong Fei ; Seung-Hoon Lee ; Dong-Yu Kim ; Jongwon Yoon ; James M. Tour
• 刊名：ACS Nano
• 出版年：2016
• 出版时间：August 23, 2016
• 年：2016
• 卷：10
• 期：8
• 页码：7598-7603
• 全文大小：405K
• 年卷期：0
• ISSN：1936-086X

文摘

Flexible resistive random access memory (RRAM) devices have attracted great interest for future nonvolatile memories. However, making active layer films at high temperature can be a hindrance to RRAM device fabrication on flexible substrates. Here, we introduced a flexible nanoporous (NP) WO_3–x RRAM device using anodic treatment in a room-temperature process. The flexible NP WO_3–x RRAM device showed bipolar switching characteristics and a high I_ON/I_OFF ratio of ∼10⁵. The device also showed stable retention time over 5 × 10⁵ s, outstanding cell-to-cell uniformity, and bending endurance over 10³ cycles when measured in both the flat and the maximum bending conditions.