Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd3As2 Nanoplates

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• 作者：Cai-Zhen Li ; Jin-Guang Li ; Li-Xian Wang ; Liang Zhang ; Jing-Min Zhang ; Dapeng Yu ; Zhi-Min Liao
• 刊名：ACS Nano
• 出版年：2016
• 出版时间：June 28, 2016
• 年：2016
• 卷：10
• 期：6
• 页码：6020-6028
• 全文大小：610K
• 年卷期：0
• ISSN：1936-086X

文摘

Cd₃As₂ is a model material of Dirac semimetal with a linear dispersion relation along all three directions in the momentum space. The unique band structure of Cd₃As₂ is made with both Dirac and topological properties. It can be driven into a Weyl semimetal by symmetry breaking or a topological insulator by enhancing the spin–orbit coupling. Here we report the temperature and gate voltage-dependent magnetotransport properties of Cd₃As₂ nanoplates with Fermi level near the Dirac point. The Hall anomaly demonstrates the two-carrier transport accompanied by a transition from n-type to p-type conduction with decreasing temperature. The carrier-type transition is explained by considering the temperature-dependent spin–orbit coupling. The magnetoresistance exhibits a large nonsaturating value up to 2000% at high temperatures, which is ascribed to the electron–hole compensation in the system. Our results are valuable for understanding the experimental observations related to the two-carrier transport in Dirac/Weyl semimetals, such as Na₃Bi, ZrTe₅, TaAs, NbAs, and HfTe₅.