High-Responsivity, High-Detectivity, Ultrafast Topological Insulator Bi2Se3/Silicon Heterostructure Broadband Photodetectors

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• 作者：Hongbin Zhang ; Xiujuan Zhang ; Chang Liu ; Shuit-Tong Lee ; Jiansheng Jie
• 刊名：ACS Nano
• 出版年：2016
• 出版时间：May 24, 2016
• 年：2016
• 卷：10
• 期：5
• 页码：5113-5122
• 全文大小：592K
• 年卷期：0
• ISSN：1936-086X

文摘

As an exotic state of quantum matter, topological insulators have promising applications in new-generation electronic and optoelectronic devices. The realization of these applications relies critically on the preparation and properties understanding of high-quality topological insulators, which however are mainly fabricated by high-cost methods like molecular beam epitaxy. We here report the successful preparation of high-quality topological insulator Bi₂Se₃/Si heterostructure having an atomically abrupt interface by van der Waals epitaxy growth of Bi₂Se₃ films on Si wafer. A simple, low-cost physical vapor deposition (PVD) method was employed to achieve the growth of the Bi₂Se₃ films. The Bi₂Se₃/Si heterostructure exhibited excellent diode characteristics with a pronounced photoresponse under light illumination. The built-in potential at the Bi₂Se₃/Si interface greatly facilitated the separation and transport of photogenerated carriers, enabling the photodetector to have a high light responsivity of 24.28 A W^–1, a high detectivity of 4.39 × 10¹² Jones (Jones = cm Hz^1/2 W^–1), and a fast response speed of aproximately microseconds. These device parameters represent the highest values for topological insulator-based photodetectors. Additionally, the photodetector possessed broadband detection ranging from ultraviolet to optical telecommunication wavelengths. Given the simple device architecture and compatibility with silicon technology, the topological insulator Bi₂Se₃/Si heterostructure holds great promise for high-performance electronic and optoelectronic applications.