Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates

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• 作者：Jiang Wu ; Qi Jiang ; Siming Chen ; Mingchu Tang ; Yuriy I. Mazur ; Yurii Maidaniuk ; Mourad Benamara ; Mykhaylo P. Semtsiv ; W. Ted Masselink ; Kimberly A. Sablon ; Gregory J. Salamo ; Huiyun Liu
• 刊名：ACS Photonics
• 出版年：2016
• 出版时间：May 18, 2016
• 年：2016
• 卷：3
• 期：5
• 页码：749-753
• 全文大小：528K
• 年卷期：0
• ISSN：2330-4022

文摘

High-performance, multispectral, and large-format infrared focal plane arrays are the long-demanded third-generation infrared technique for hyperspectral imaging, infrared spectroscopy, and target identification. A promising solution is to monolithically integrate infrared photodetectors on a silicon platform, which offers not only low-cost but high-resolution focal plane arrays by taking advantage of the well-established Si-based readout integrated circuits. Here, we report the first InAs/GaAs quantum dot (QD) infrared photodetectors monolithically integrated on silicon substrates by molecular beam epitaxy. The III–V photodetectors are directly grown on silicon substrates by using a GaAs buffer, which reduces the threading dislocation density to ∼10⁶ cm^–2. The high-quality QDs grown on Si substrates have led to long photocarrier relaxation time and low dark current density. Mid-infrared photodetection up to ∼8 μm is also achieved at 80 K. This work demonstrates that III–V photodetectors can directly be integrated with silicon readout circuitry for realizing large-format focal plane arrays as well as mid-infrared photonics in silicon.