Evidence of Nanocrystalline Semiconducting Graphene Monoxide during Thermal Reduction of Graphene Oxide in Vacuum

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• 作者：Eric C. Mattson ; Haihui Pu ; Shumao Cui ; Marvin A. Schofield ; Sonny Rhim ; Ganhua Lu ; Michael J. Nasse ; Rodney S. Ruoff ; Michael Weinert ; Marija Gajdardziska-Josifovska ; Junhong Chen ; Carol J. Hirschmugl
• 刊名：ACS Nano
• 出版年：2011
• 出版时间：December 27, 2011
• 年：2011
• 卷：5
• 期：12
• 页码：9710-9717
• 全文大小：972K
• 年卷期：0
• ISSN：1936-086X

文摘

As silicon-based electronics are reaching the nanosize limits of the semiconductor roadmap, carbon-based nanoelectronics has become a rapidly growing field, with great interest in tuning the properties of carbon-based materials. Chemical functionalization is a proposed route, but syntheses of graphene oxide (G-O) produce disordered, nonstoichiometric materials with poor electronic properties. We report synthesis of an ordered, stoichiometric, solid-state carbon oxide that has never been observed in nature and coexists with graphene. Formation of this material, graphene monoxide (GMO), is achieved by annealing multilayered G-O. Our results indicate that the resulting thermally reduced G-O (TRG-O) consists of a two-dimensional nanocrystalline phase segregation: unoxidized graphitic regions are separated from highly oxidized regions of GMO. GMO has a quasi-hexagonal unit cell, an unusually high 1:1 O:C ratio, and a calculated direct band gap of ∼0.9 eV.