Tunable p-Type Conductivity and Transport Properties of AlN Nanowires via Mg Doping

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• 作者：Yong-Bing Tang ; Xiang-Hui Bo ; Jun Xu ; Yu-Lin Cao ; Zhen-Hua Chen ; Hai-Sheng Song ; Chao-Ping Liu ; Tak-Fu Hung ; Wen-Jun Zhang ; Hui-Ming Cheng ; Igor Bello ; Shuit-Tong Lee ; Chun-Sing Lee
• 刊名：ACS Nano
• 出版年：2011
• 出版时间：May 24, 2011
• 年：2011
• 卷：5
• 期：5
• 页码：3591-3598
• 全文大小：1011K
• 年卷期：0
• ISSN：1936-086X

文摘

Arrays of well-aligned AlN nanowires (NWs) with tunable p-type conductivity were synthesized on Si(111) substrates using bis(cyclopentadienyl)magnesium (Cp₂Mg) vapor as a doping source by chemical vapor deposition. The Mg-doped AlN NWs are single-crystalline and grow along the [001] direction. Gate-voltage-dependent transport measurements on field-effect transistors constructed from individual NWs revealed the transition from n-type conductivity in the undoped AlN NWs to p-type conductivity in the Mg-doped NWs. By adjusting the doping gas flow rate (0–10 sccm), the conductivity of AlN NWs can be tuned over 7 orders of magnitude from (3.8–8.5) × 10^–6 Ω^–1 cm^–1 for the undoped sample to 15.6–24.4 Ω^–1 cm^–1 for the Mg-doped AlN NWs. Hole concentration as high as 4.7 × 10¹⁹ cm^–3 was achieved for the heaviest doping. In addition, the maximum hole mobility (∼6.4 cm²/V s) in p-type AlN NWs is much higher than that of Mg-doped AlN films (∼1.0 cm²/V s).(2) The realization of p-type AlN NWs with tunable electrical transport properties may open great potential in developing practical nanodevices such as deep-UV light-emitting diodes and photodetectors.