Solution-Synthesized In4SnSe4 Semiconductor Microwires with a Direct Band Gap

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• 作者：Du Sun ; Yihuang Xiong ; Yifan Sun ; Ismaila Dabo ; Raymond E. Schaak
• 刊名：Chemistry of Materials
• 出版年：2017
• 出版时间：February 14, 2017
• 年：2017
• 卷：29
• 期：3
• 页码：1095-1098
• 全文大小：398K
• ISSN：1520-5002

文摘

Semiconductor materials having direct band gaps that overlap well with the solar spectrum are important for a variety of applications in solar energy conversion and optoelectronics. Here, we identify the ternary chalcogenide In₄SnSe₄ as a direct band gap semiconductor having a band gap of approximately 1.6 eV. In₄SnSe₄, which contains isolated tetrahedral [SnIn₄]⁸⁺ clusters embedded in an In–Se framework, was synthesized by precipitation from solution at 300 °C. The In₄SnSe₄ product consists of microwires having lengths of approximately 5–20 μm and widths of approximately 100–400 nm. Band structure calculations predict a direct electronic band gap of approximately 2.0 eV. Diffuse reflectance UV–visible spectroscopy qualitatively validates the predicted direct band gap, yielding an observed optical band gap of 1.6 eV.