Porous Field-Effect Transistors Based on a Semiconductive Metal–Organic Framework

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• 作者：Guodong Wu ; Jiahong Huang ; Ying Zang ; Jun He ; Gang Xu
• 刊名：Journal of the American Chemical Society
• 出版年：2017
• 出版时间：February 1, 2017
• 年：2017
• 卷：139
• 期：4
• 页码：1360-1363
• 全文大小：318K
• ISSN：1520-5126

文摘

Recently, the emergence of conductive metal–organic frameworks (MOFs) has given great prospects for their applications as active materials in electronic devices. In this work, a high-quality, free-standing conductive MOF membrane was prepared by an air–liquid interfacial growth method. Accordingly, field-effect transistors (FETs) possessing a crystalline microporous MOF channel layer were successfully fabricated for the first time. The porous FETs exhibited p-type behavior, distinguishable on/off ratios, and excellent field-effect hole mobilities as high as 48.6 cm² V^–1 s^–1, which is even comparable to the highest value reported for solution-processed organic or inorganic FETs.