Nanoscale Engineering in VO2 Nanowires via Direct Electron Writing Process

详细信息    查看全文

• 作者：Zhenhua Zhang ; Hua Guo ; Wenqiang Ding ; Bin Zhang ; Yue Lu ; Xiaoxing Ke ; Weiwei Liu ; Furong Chen ; Manling Sui
• 刊名：Nano Letters
• 出版年：2017
• 出版时间：February 8, 2017
• 年：2017
• 卷：17
• 期：2
• 页码：851-855
• 全文大小：366K
• ISSN：1530-6992

文摘

Controlling phase transition in functional materials at nanoscale is not only of broad scientific interest but also important for practical applications in the fields of renewable energy, information storage, transducer, sensor, and so forth. As a model functional material, vanadium dioxide (VO₂) has its metal–insulator transition (MIT) usually at a sharp temperature around 68 °C. Here, we report a focused electron beam can directly lower down the transition temperature of a nanoarea to room temperature without prepatterning the VO₂. This novel process is called radiolysis-assisted MIT (R-MIT). The electron beam irradiation fabricates a unique gradual MIT zone to several times of the beam size in which the temperature-dependent phase transition is achieved in an extended temperature range. The gradual transformation zone offers to precisely control the ratio of metal/insulator phases. This direct electron writing technique can open up an opportunity to precisely engineer nanodomains of diversified electronic properties in functional material-based devices.