Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene Insertion Layer

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• 作者：Hoon Hahn Yoon ; Sungchul Jung ; Gahyun Choi ; Junhyung Kim ; Youngeun Jeon ; Yong Soo KimHu Young Jeong ; Kwanpyo Kim ; Soon-Yong Kwon ; Kibog Park
• 刊名：Nano Letters
• 出版年：2017
• 出版时间：January 11, 2017
• 年：2017
• 卷：17
• 期：1
• 页码：44-49
• 全文大小：488K
• ISSN：1530-6992

文摘

We report the systematic experimental studies demonstrating that a graphene layer inserted at metal/n-Si(001) interface is efficient to explore interface Fermi-level pinning effect. It is confirmed that an inserted graphene layer prevents atomic interdiffusion to form an atomically abrupt Schottky contact. The Schottky barriers of metal/graphene/n-Si(001) junctions show a very weak dependence on metal work-function, implying that the metal Fermi-level is almost completely pinned at charge neutrality level close to the valence band edge of Si. The atomically impermeable and electronically transparent properties of graphene can be used generally to form an intact Schottky contact for all semiconductors.