Achieving Ultrahigh Carrier Mobility in Two-Dimensional Hole Gas of Black Phosphorus

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• 作者：Gen Long ; Denis Maryenko ; Junying Shen ; Shuigang Xu ; Jianqiang Hou ; Zefei Wu ; Wing Ki Wong ; Tianyi Han ; Jiangxiazi Lin ; Yuan Cai ; Rolf Lortz ; Ning Wang
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：December 14, 2016
• 年：2016
• 卷：16
• 期：12
• 页码：7768-7773
• 全文大小：513K
• ISSN：1530-6992

文摘

We demonstrate that a field-effect transistor (FET) made of few-layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum exhibits a room-temperature hole mobility of 5200 cm²/(Vs), being limited just by the phonon scattering. At cryogenic temperatures, the FET mobility increases up to 45 000 cm²/(Vs), which is five times higher compared to the mobility obtained in earlier reports. The unprecedentedly clean h-BN–BP–h-BN heterostructure exhibits Shubnikov–de Haas oscillations and a quantum Hall effect with Landau level (LL) filling factors down to v = 2 in conventional laboratory magnetic fields. Moreover, carrier density independent effective mass of m^* = 0.26 m₀ is measured, and a Landé g-factor of g = 2.47 is reported. Furthermore, an indication for a distinct hole transport behavior with up- and down-spin orientations is found.