用户名: 密码: 验证码:
Enhanced Optoelectronic Performance on the (110) Lattice Plane of an MAPbBr3 Single Crystal
详细信息    查看全文
文摘
Hybrid organic–inorganic lead halide perovskites have attracted significant attention due to their impressive optoelectronic properties. MAPbX3 (MA= CH3NH3+, X= Cl, Br or I), the most popular member of this family, has been recognized as an important next-generation optoelectronic materials contender, and remarkable progress has been achieved in both thin films and single crystals. However, the lack of optimizations in energy harvest, transportation, carrier extraction, and process compatibility is hindering their future development. In this study, a triangle prism MAPbBr3 single crystal exposing (100) and (110) crystallographic planes was successfully synthesized, and the optoelectronic performances of these two lattice planes were systematically explored by employing a planar metal–semiconductor–metal (MSM) device. Compared to the device fabricated on the (100) plane, a 153.33% enhancement of responsivity was achieved under 10 μW irradiation and 10 V bias on the (110) plane. Finally, possible mechanism for such an enhancement was discussed based on the different defect migration behaviors of (100) and (110) planes.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700