Broadband Phototransistor Based on CH3NH3PbI3 Perovskite and PbSe Quantum Dot Heterojunction

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• 作者：Yu YuYating Zhang ; Zhang Zhang ; Haiting Zhang ; Xiaoxian Song ; Mingxuan Cao ; Yongli Che ; Haitao Dai ; Junbo Yang ; Jianlong Wang ; Heng Zhang ; Jianquan Yao
• 刊名：The Journal of Physical Chemistry Letters
• 出版年：2017
• 出版时间：January 19, 2017
• 年：2017
• 卷：8
• 期：2
• 页码：445-451
• 全文大小：459K
• ISSN：1948-7185

文摘

Organic lead halide perovskites have received a huge amount of interest since emergence, because of tremendous potential applications in optoelectronic devices. Here field effect phototransistors (FE_pTs) based on CH₃NH₃PbI₃ perovskite/PbSe colloidal quantum dot heterostructure are demonstrated. The high light absorption and optoelectric conversion efficiency, due to the combination of perovskite and quantum dots, maintain the responsivities in a high level, especially at 460 nm up to 1.2 A/W. The phototransistor exhibits bipolar behaviors, and the carrier mobilities are determined to be 0.147 cm²V^–1s^–1 for holes and 0.16 cm²V^–1s^–1 for electrons. The device has a wide spectral response spectrum ranging from 300 to 1500 nm. A short photoresponse time is less than 3 ms due to the assistance of heterojunction on the transfer of photoexcitons. The excellent performances presented in the device especially emphasize the CH₃NH₃PbI₃ perovskite–PbSe quantum dot as a promising material for future photoelectronic applications.