Heteroatom Nitrogen- and Boron-Doping as a Facile Strategy to Improve Photocatalytic Activity of Standalone Reduced Graphene Oxide in Hydrogen Evolution

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• 作者：Lutfi K. Putri ; Boon-Junn Ng ; Wee-Jun OngHing Wah Lee ; Wei Sea Chang ; Siang-Piao Chai
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2017
• 出版时间：February 8, 2017
• 年：2017
• 卷：9
• 期：5
• 页码：4558-4569
• 全文大小：751K
• ISSN：1944-8252

文摘

Owing to its superior properties and versatility, graphene has been proliferating the energy research scene in the past decade. In this contribution, nitrogen (N-) and boron (B-) doped reduced graphene oxide (rGO) variants were investigated as a sole photocatalyst for the green production of H₂ and their properties with respect to photocatalysis were elucidated for the first time. N- and B-rGOs were facilely prepared via the pyrolysis of graphene oxide with urea and boron anhydride as their respective dopant source. The pyrolysis temperature was varied (600–800 °C for N-rGO and 800–1000 °C for B-rGO) in order to modify dopant loading percentage (%) which was found to be influential to photocatalytic activity. N-rGO600 (8.26 N at%) and B-rGO1000 (3.59 B at%), which holds the highest at% from each of their party, exhibited the highest H₂ activity. Additionally, the effects of the nature of N and B bonding configuration in H₂ photoactivity were also examined. This study demonstrates the importance of dopant atoms in graphene, rendering doping as an effective strategy to bolster photocatalytic activity for standalone graphene derivative photocatalysts.