Low-Temperature Wet Conformal Nickel Silicide Deposition for Transistor Technology through an Organometallic Approach

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• 作者：Tsung-Han Lin ; Tigran Margossian ; Michele De Marchi ; Maxime Thammasack ; Dmitry Zemlyanov ; Sudhir Kumar ; Jakub Jagielski ; Li-Qing Zheng ; Chih-Jen ShihRenato Zenobi ; Giovanni De Micheli ; David Baudouin ; Pierre-Emmanuel Gaillardon ; Christophe Copéret
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2017
• 出版时间：February 8, 2017
• 年：2017
• 卷：9
• 期：5
• 页码：4948-4955
• 全文大小：524K
• ISSN：1944-8252

文摘

The race for performance of integrated circuits is nowadays facing a downscale limitation. To overpass this nanoscale limit, modern transistors with complex geometries have flourished, allowing higher performance and energy efficiency. Accompanying this breakthrough, challenges toward high-performance devices have emerged on each significant step, such as the inhomogeneous coverage issue and thermal-induced short circuit issue of metal silicide formation. In this respect, we developed a two-step organometallic approach for nickel silicide formation under near-ambient temperature. Transmission electron and atomic force microscopy show the formation of a homogeneous and conformal layer of NiSi_x on pristine silicon surface. Post-treatment decreases the carbon content to a level similar to what is found for the original wafer (∼6%). X-ray photoelectron spectroscopy also reveals an increasing ratio of Si content in the layer after annealing, which is shown to be NiSi₂ according to X-ray absorption spectroscopy investigation on a Si nanoparticle model. I–V characteristic fitting reveals that this NiSi₂ layer exhibits a competitive Schottky barrier height of 0.41 eV and series resistance of 8.5 Ω, thus opening an alternative low-temperature route for metal silicide formation on advanced devices.