Perovskite/Poly(3-hexylthiophene)/Graphene Multiheterojunction Phototransistors with Ultrahigh Gain in Broadband Wavelength Region

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• 作者：Chao XieFeng Yan
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2017
• 出版时间：January 18, 2017
• 年：2017
• 卷：9
• 期：2
• 页码：1569-1576
• 全文大小：525K
• ISSN：1944-8252

文摘

Organometal halide perovskite materials have attracted much attention recently for their excellent optoelectronic properties. Here, we report an ultrasensitive phototransistor based on the multiheterojunction of CH₃NH₃PbI_3–xCl_x perovskite/poly(3-hexylthiophene)/graphene for the first time. Since the photoexcited electrons and holes are effectively separated by the poly(3-hexylthiophene) layer, high-density electrons are trapped in the perovskite layer, leading to a strong photogating effect on the underlying graphene channel. The phototransistor demonstrates an unprecedented ultrahigh responsivity of ∼4.3 × 10⁹ A/W and a gain approaching 10¹⁰ electrons per photon, respectively. More importantly, the device is sensitive in a broadband wavelength region from ultraviolet to near-infrared, which has not yet been achieved with other perovskite photodetectors. It is expected that the novel perovskite phototransistor will find promising applications as photodetection and imaging devices in the future.