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• 作者：Jinbum Kim ; Seongheum Choi ; Taejin Park ; Jinyong Kim ; Chulsung Kim ; Taeho Cha ; Hyangsook Lee ; Eunha Lee ; Jung Yeon Won ; Hyung-Ik Lee ; Sangjin Hyun ; Sunjung Kim ; Dongsuk Shin ; Yihwan Kim ; Keewon Kwon ; Hyoungsub Kim
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2017
• 出版时间：January 11, 2017
• 年：2017
• 卷：9
• 期：1
• 页码：566-572
• 全文大小：498K
• ISSN：1944-8252

文摘

To synthesize a thermally robust Ni_1–xPt_xSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a local surface temperature above 1000 °C while heating the substrate to initiate a phase transition. The melting and quenching process by this unique high-temperature MSA process formed a Ni_1–xPt_xSi film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 °C, the noble Ni_1–xPt_xSi film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.