Approximately 800-nm-Thick Pinhole-Free Perovskite Films via Facile Solvent Retarding Process for Efficient Planar Solar Cells

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• 作者：Zhongcheng Yuan ; Yingguo Yang ; Zhongwei Wu ; Sai Bai ; Weidong Xu ; Tao Song ; Xingyu Gao ; Feng Gao ; Baoquan Sun
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：December 21, 2016
• 年：2016
• 卷：8
• 期：50
• 页码：34446-34454
• 全文大小：572K
• ISSN：1944-8252

文摘

Device performance of organometal halide perovskite solar cells significantly depends on the quality and thickness of perovskite absorber films. However, conventional deposition methods often generate pinholes within ∼300 nm-thick perovskite films, which are detrimental to the large area device manufacture. Here we demonstrated a simple solvent retarding process to deposit uniform pinhole free perovskite films with thicknesses up to ∼800 nm. Solvent evaporation during the retarding process facilitated the components separation in the mixed halide perovskite precursors, and hence the final films exhibited pinhole free morphology and large grain sizes. In addition, the increased precursor concentration after solvent-retarding process led to thick perovskite films. Based on the uniform and thick perovskite films prepared by this convenient process, a champion device efficiency up to 16.8% was achieved. We believe that this simple deposition procedure for high quality perovskite films around micrometer thickness has a great potential in the application of large area perovskite solar cells and other optoelectronic devices.