Toward Switchable Photovoltaic Effect via Tailoring Mobile Oxygen Vacancies in Perovskite Oxide Films

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• 作者：Chen Ge ; Kui-juan Jin ; Qing-hua Zhang ; Jian-yu Du ; Lin Gu ; Hai-zhong Guo ; Jing-ting Yang ; Jun-xing Gu ; Meng He ; Jie Xing ; Can Wang ; Hui-bin Lu ; Guo-zhen Yang
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：December 21, 2016
• 年：2016
• 卷：8
• 期：50
• 页码：34590-34597
• 全文大小：529K
• ISSN：1944-8252

文摘

The defect chemistry of perovskite oxides involves the cause to most of their abundant functional properties, including interface magnetism, charge transport, ionic exchange, and catalytic activity. The possibility to achieve dynamic control over oxygen anion vacancies offers a unique opportunity for the development of appealing switchable devices, which at present are commonly based on ferroelectric materials. Herein, we report the discovery of a switchable photovoltaic effect, that the sign of the open voltage and the short circuit current can be reversed by inverting the polarity of the applied field, upon electrically tailoring the distribution of oxygen vacancies in perovskite oxide films. This phenomenon is demonstrated in lateral photovoltaic devices based on both ferroelectric BiFeO₃ and paraelectric SrTiO₃ films, under a reversed applied field whose magnitude is much smaller than the coercivity value of BiFeO₃. The migration of oxygen vacancies was directly observed by employing an advanced annular bright-field scanning transmission electron microscopy technique with in situ biasing equipment. We conclude that the band bending induced by the motion of oxygen vacancies is the driving force for the reversible switching between two photovoltaic states. The present work can provide an active path for the design of novel switchable photovoltaic devices with a wide range of transition metal oxides in terms of the ionic degrees of freedom.