Electronic Structure and Band Gap of Fullerenes on Tungsten Surfaces: Transition from a Semiconductor to a Metal Triggered by Annealing

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• 作者：Ehsan Monazami ; John B. McClimon ; James RondinelliPetra Reinke
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：December 21, 2016
• 年：2016
• 卷：8
• 期：50
• 页码：34854-34862
• 全文大小：600K
• ISSN：1944-8252

文摘

The understanding and control of molecule–metal interfaces is critical to the performance of molecular electronics and photovoltaics devices. We present a study of the interface between C₆₀ and W, which is a carbide-forming transition metal. The complex solid-state reaction at the interface can be exploited to adjust the electronic properties of the molecule layer. Scanning tunneling microscopy/spectroscopy measurements demonstrate the progression of this reaction from wide band gap (>2.5 eV) to metallic molecular surface during annealing from 300 to 800 K. Differential conduction maps with 10⁴ scanning tunneling spectra are used to quantify the transition in the density of states and the reduction of the band gap during annealing with nanometer spatial resolution. The electronic transition is spatially homogeneous, and the surface band gap can therefore be adjusted by a targeted annealing step. The modified molecules, which we call nanospheres, are quite resistant to ripening and coalescence, unlike any other metallic nanoparticle of the same size. Densely packed C₆₀ and isolated C₆₀ molecules show the same transition in electronic structure, which confirms that the transformation is controlled by the reaction at the C₆₀–W interface. Density functional theory calculations are used to develop possible reaction pathways in agreement with experimentally observed electronic structure modulation. Control of the band gap by the choice of annealing temperature is a unique route to tailoring molecular-layer electronic properties.