详细信息    查看全文

• 作者：Sum-Gyun Yi ; Sung Hyun Kim ; Sungjin Park ; Donggun Oh ; Hwan Young Choi ; Nara Lee ; Young Jai Choi ; Kyung-Hwa Yoo
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：December 14, 2016
• 年：2016
• 卷：8
• 期：49
• 页码：33811-33820
• 全文大小：758K
• ISSN：1944-8252

文摘

We developed Schottky junction photovoltaic cells based on multilayer Mo_1–xW_xSe₂ with x = 0, 0.5, and 1. To generate built-in potentials, Pd and Al were used as the source and drain electrodes in a lateral structure, and Pd and graphene were used as the bottom and top electrodes in a vertical structure. These devices exhibited gate-tunable diode-like current rectification and photovoltaic responses. Mo_0.5W_0.5Se₂ Schottky diodes with Pd and Al electrodes exhibited higher photovoltaic efficiency than MoSe₂ and WSe₂ devices with Pd and Al electrodes, likely because of the greater adjusted band alignment in Mo_0.5W_0.5Se₂ devices. Furthermore, we showed that Mo_0.5W_0.5Se₂-based vertical Schottky diodes yield a power conversion efficiency of ∼16% under 532 nm light and ∼13% under a standard air mass 1.5 spectrum, demonstrating their remarkable potential for photovoltaic applications.