Water-Assisted Preparation of High-Purity Semiconducting (14,4) Carbon Nanotubes

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• 作者：Feng Yang ; Xiao Wang ; Jia Si ; Xiulan Zhao ; Kuo Qi ; Chuanhong Jin ; Zeyao Zhang ; Meihui Li ; Daqi Zhang ; Juan YangZhiyong Zhang ; Zhi XuLian-Mao Peng ; Xuedong Bai ; Yan Li
• 刊名：ACS Nano
• 出版年：2017
• 出版时间：January 24, 2017
• 年：2017
• 卷：11
• 期：1
• 页码：186-193
• 全文大小：605K
• ISSN：1936-086X

文摘

Semiconducting single-walled carbon nanotubes (s-SWNTs) with diameters of 1.0–1.5 nm (with similar bandgap to crystalline silicon) are highly desired for nanoelectronics. Up to date, the highest reported content of s-SWNTs as-grown is ∼97%, which is still far below the daunting requirements of high-end applications. Herein, we report a feasible and green pathway to use H₂O vapor to modulate the structure of the intermetallic W₆Co₇ nanocrystals. By using the resultant W₆Co₇ nanocatalysts with a high percentage of (1 0 10) planes as structural templates, we realized the direct growth of s-SWNT with the purity of ∼99%, in which ∼97% is (14,4) tubes (diameter 1.29 nm). H₂O can also act as an environmentally friendly and facile etchant for eliminating metallic SWNTs, and the content of s-SWNTs was further improved to 99.8% and (14,4) tubes to 98.6%. High purity s-SWNTs with even bandgap determined by their uniform structure can be used for the exquisite applications in different fields.