Composition-Modulated Two-Dimensional Semiconductor Lateral Heterostructures via Layer-Selected Atomic Substitution

详细信息    查看全文

• 作者：Honglai Li ; Xueping Wu ; Hongjun Liu ; Biyuan Zheng ; Qinglin Zhang ; Xiaoli Zhu ; Zheng Wei ; Xiujuan Zhuang ; Hong Zhou ; Wenxin Tang ; Xiangfeng DuanAnlian Pan
• 刊名：ACS Nano
• 出版年：2017
• 出版时间：January 24, 2017
• 年：2017
• 卷：11
• 期：1
• 页码：961-967
• 全文大小：463K
• ISSN：1936-086X

文摘

Composition-controlled growth of two-dimensional layered semiconductor heterostructures is crucially important for their applications in multifunctional integrated photonics and optoelectronics devices. Here, we report the realization of composition completely modulated layered semiconductor MoS₂–MoS_2(1–x)Se_2x (0 < x < 1) lateral heterostructures via the controlled layer-selected atomic substitution of pregrown stacking MoS₂, with a bilayer located at the center of a monolayer. Through controlling the reaction time, S at the monolayer MoS₂ at the peripheral area can be selectively substituted by Se atoms at different levels, while the bilayer region at the center retains the original composition. Microstructure characterizations demonstrated the formation of lateral heterostructures with a sharp interface, with the composition at the monolayer area gradually modulated from MoS₂ to MoSe₂ and having high-quality crystallization at both the monolayer and the bilayer areas. Photoluminescence and Raman mapping studies exhibit the tunable optical properties only at the monolayer region of the as-grown heterostructures, which further demonstrates the realization of high-quality composition/bandgap modulated lateral heterostructures. This work offers an interesting and easy route for the development of high-quality layered semiconductor heterostructures for potential broad applications in integrated nanoelectronic and optoelectronic devices.