Three-Dimensional Fin-Structured Semiconducting Carbon Nanotube Network Transistor

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• 作者：Dongil Lee ; Byung-Hyun Lee ; Jinsu Yoon ; Dae-Chul Ahn ; Jun-Young Park ; Jae Hur ; Myung-Su Kim ; Seung-Bae Jeon ; Min-Ho Kang ; Kwanghee Kim ; Meehyun Lim ; Sung-Jin Choi ; Yang-Kyu Choi
• 刊名：ACS Nano
• 出版年：2016
• 出版时间：December 27, 2016
• 年：2016
• 卷：10
• 期：12
• 页码：10894-10900
• 全文大小：407K
• ISSN：1936-086X

文摘

Three-dimensional (3-D) fin-structured carbon nanotube field-effect transistors (CNT-FETs) with purified 99.9% semiconducting CNTs were demonstrated on a large scale 8 in. silicon wafer. The fabricated 3-D CNT-FETs take advantage of the 3-D geometry and exhibit enhanced electrostatic gate controllability and superior charge transport. A trigated structure surrounding the randomly networked single-walled CNT channel was formed on a fin-like 3-D silicon frame, and as a result, the effective packing density increased to almost 600 CNTs/μm. Additionally, highly sensitive controllability of the threshold voltage (V_TH) was achieved using a thin back gate oxide in the same silicon frame to control power consumption and enhance performance. Our results are expected to broaden the design margin of CNT-based circuit architectures for versatile applications. The proposed 3-D CNT-FETs can potentially provide a desirable alternative to silicon based nanoelectronics and a blueprint for furthering the practical use of emerging low-dimensional materials other than CNTs.