Wafer-scale fabrication of uniform Si nanowire arrays using the Si wafer with UV/Ozone pretreatment

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• 作者：Fan Bai (1) (2)
  Meicheng Li (1) (2) (3)
  Rui Huang (2)
  Yue Yu (2)
  Tiansheng Gu (2)
  Zhao Chen (2)
  Huiyang Fan (2)
  Bing Jiang (2)
  
• 关键词：Silicon nanowire arrays ; UV/Ozone ; Wafer ; scale ; Uniformity ; Self ; cleaning
• 刊名：Journal of Nanoparticle Research
• 出版年：2013
• 出版时间：September 2013
• 年：2013
• 卷：15
• 期：9
• 全文大小：618 KB
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• 作者单位：Fan Bai (1) (2)
  Meicheng Li (1) (2) (3)
  Rui Huang (2)
  Yue Yu (2)
  Tiansheng Gu (2)
  Zhao Chen (2)
  Huiyang Fan (2)
  Bing Jiang (2)
  
  1. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China
  2. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of Renewable Energy, North China Electric Power University, Beijing, 102206, China
  3. Suzhou Institute, North China Electric Power University, Suzhou, 215123, China
  
• ISSN：1572-896X

文摘

The electroless etching technique combined with the process of UV/Ozone pretreatment is presented for wafer-scale fabrication of the silicon nanowire (SiNW) arrays. The high-level uniformity of the SiNW arrays is estimated by the value below 0.2 of the relative standard deviation of the reflection spectra on the 4-in. wafer. Influence of the UV/Ozone pretreatment on the formation of SiNW arrays is investigated. It is seen that a very thin SiO2 produced by the UV/Ozone pretreatment improves the uniform nucleation of Ag nanoparticles (NPs) on the Si surface because of the effective surface passivation. Meanwhile, the SiO2 located among the adjacent Ag NPs can obstruct the assimilation growth of Ag NPs, facilitating the deposition of the uniform and dense Ag NPs catalysts, which induces the formation of the SiNW arrays with good uniformity and high filling ratio. Furthermore, the remarkable antireflective and hydrophobic properties are observed for the SiNW arrays which display great potential in self-cleaning antireflection applications.