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Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer
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  • 作者：Kuan-Chang Chang (1)
    Jen-wei Huang (2)
    Ting-Chang Chang (3) (4)
    Tsung-Ming Tsai (1)
    Kai-Huang Chen (5)
    Tai-Fa Young (6)
    Jung-Hui Chen (7)
    Rui Zhang (8)
    Jen-Chung Lou (8)
    Syuan-Yong Huang (1)
    Yin-Chih Pan (1)
    Hui-Chun Huang (1)
    Yong-En Syu (3)
    Der-Shin Gan (1)
    Ding-Hua Bao (9)
    Simon M Sze (10)
  • 关键词：RRAM ; Porous SiO2 ; Space charge limited current ; Zr
  • 刊名：Nanoscale Research Letters
  • 出版年：2013
  • 出版时间：December 2013
  • 年：2013
  • 卷：8
  • 期：1
  • 全文大小：577 KB
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  • 作者单位：Kuan-Chang Chang (1)
    Jen-wei Huang (2)
    Ting-Chang Chang (3) (4)
    Tsung-Ming Tsai (1)
    Kai-Huang Chen (5)
    Tai-Fa Young (6)
    Jung-Hui Chen (7)
    Rui Zhang (8)
    Jen-Chung Lou (8)
    Syuan-Yong Huang (1)
    Yin-Chih Pan (1)
    Hui-Chun Huang (1)
    Yong-En Syu (3)
    Der-Shin Gan (1)
    Ding-Hua Bao (9)
    Simon M Sze (10)

    1. Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan
    2. Department of Physics, R.O.C. Military Academy, Kaohsiung, Taiwan
    3. Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan
    4. Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, Taiwan
    5. Department of Electronics Engineering and Computer Science, Tung Fang Design Institute, Kaohsiung, Taiwan
    6. Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan
    7. Department of Chemistry, National Kaohsiung Normal University, Kaohsiung, Taiwan
    8. School of Software and Microelectronics, Peking University, Beijing, People鈥檚 Republic of China
    9. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, 510275, Guangzhou, China
    10. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan
  • ISSN：1556-276X
文摘
To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 thin films were analyzed and discussed. In addition, the original space charge limited current (SCLC) conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO2/porous SiO2 thin films was found. Finally, a space electric field concentrated effect in the bilayer Zr:SiO2/porous SiO2 RRAM devices was also explained and verified by the COMSOL Multiphysics simulation model.

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