TeraHertz electronic noise in field-effect transistors

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• 作者：C. Palermo (1) (2)
  H. Marinchio (1) (2)
  P. Shiktorov (3)
  E Starikov (3)
  V. Gru啪inskis (3)
  A. Mahi (1) (2) (4)
  L Varani (1) (2)
  
  1. Univ. Montpellier ; IES ; UMR 5214 ; 34000 ; Montpellier ; France
  2. CNRS ; IES ; UMR 5214 ; 34000 ; Montpellier ; France
  3. Semiconductor Physics Institute ; A. Gostauto 11 ; 2600 ; Vilnius ; Lithuania
  4. University of Bechar ; Bechar ; 08000 ; Algeria
  
• 关键词：Electronic noise ; HEMT ; Terahertz
• 刊名：Journal of Computational Electronics
• 出版年：2015
• 出版时间：March 2015
• 年：2015
• 卷：14
• 期：1
• 页码：87-93
• 全文大小：578 KB
• 参考文献：1. Blin, S., Tohme, L., Hisatake, S., Arakawa, K., Nouvel, P., Coquillat, D., Penarier, A., Torres, J., Varani, L., Knap, W., Nagatsuma, T.: Plasma-wave detectors for terahertz wireless communication. Electron. Lett. 33, 1354鈥?356 (2012)
  2. Shiktorov, P, Starikov, E, Gru啪zinskis, V, Varani, L, Sabatini, G, Marinchio, H, Reggiani, L (2009) Problems of noise modeling in the presence of total current branching in high electron mobility transistor and field-effect transistor channels. J. Stat. Mech Theory Exp. 2009: pp. 01047 CrossRef
  3. Dyakonov, M., Shur, M.: Plasma wave electronics: novel terahertz devices using two dimensional electron fluid. IEEE Trans. Electron. Devices 43, 1640鈥?645 (1996)
  4. Millithaler, J-F, Reggiani, L, Pousset, J, Varani, L, Palermo, C, Knap, W, Mat茅os, J, Gonz谩lez, T, P茅rez, S, Pardo, D (2008) Monte Carlo investigation of terahertz plasma oscillations in ultrathin layers of n-type $$\text{ In }_{0.53}\text{ Ga }_{0.47}$$ In 0.53 Ga 0.47 As. Appl. Phys. Lett. 92: pp. 042113 CrossRef
  5. Nouvel, P, Torres, J, Blin, S, Marinchio, H, Laurent, T, Palermo, C, Varani, L, Shiktorov, P, Starikov, E, Gru啪inskis, V, Teppe, F, Roelens, Y, Shchepetov, A, Bollaert, S (2012) TeraHertz emission induced by optical beating in nanometer-length field-effect transistors. J. Appl. Phys. 111: pp. 103707 CrossRef
  6. Nouvel, P, Marinchio, H, Torres, J, Palermo, C, Gasquet, D, Chusseau, L, Varani, L, Shiktorov, P, Starikov, E, Gru啪inskis, V (2009) Terahertz spectroscopy of optically excited resonant plasma waves in high electron mobility transistor. J. Appl. Phys. 106: pp. 013717 CrossRef
  7. Marinchio, H, Chusseau, L, Torres, J, Nouvel, P, Varani, L, Sabatini, G, Palermo, C, Shiktorov, P, Starikov, E, Gru啪inskis, V (2010) Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor. Appl. Phys. Lett. 96: pp. 013502 CrossRef
  8. Marinchio, H, Palermo, C, Sabatini, G, Varani, L, Shiktorov, P, Starikov, E, Gru啪inskis, V (2010) Pseudo-two-dimensional Poisson equation for the modeling of field-effect transistors. J. Comput. Electron. 9: pp. 141-145 CrossRef
  9. Shiktorov, P, Starikov, E, Gru啪inskis, V, P茅rez, S, Gonz谩lez, T, Reggiani, L, Varani, L, Vaissi猫re, JC (2003) Upconversion of partition noise in semiconductors operating under periodic large-signal conditions. Phys. Rev. B 67: pp. 165201 CrossRef
  10. Torres, J, Marinchio, H, Nouvel, P, Sabatini, G, Palermo, C, Varani, L, Chusseau, L, Shiktorov, P, Starikov, E, Gru啪inskis, V (2008) Plasma waves subterahertz optical beating detection and enhancement in long-channel high-electron-mobility transistors: experiments and modeling. IEEE J. Select. Top. Quant. Electron. 14: pp. 491 CrossRef
  
• 刊物类别：Engineering
• 刊物主题：Electronic and Computer Engineering
  Optical and Electronic Materials
  Mathematical and Computational Physics
  Applied Mathematics and Computational Methods of Engineering
  Mechanical Engineering
  
• 出版者：Springer Netherlands
• ISSN：1572-8137

文摘

We present a theoretical investigation of high-frequency electronic noise in field-effect transistors used as detectors of TeraHertz radiation. Calculations are performed using the hydrodynamic-Langevin approach and specialized to the case of InGaAs high-electron mobility transistors. The main physical phenomena associated with the effect of branching of the total current between channel and gate and the appearance of two-dimensional plasma waves are discussed. We demonstrate that thermally excited standing plasma waves originate series of resonant peaks in the corresponding noise spectral densities whose presence can be controlled by the embedding circuit. A significant damping of the high-frequency excess noise is found when the transistor is submitted to a two-lasers optical photo-excitation presenting a beating frequency in the TeraHertz range. Finally, we discuss the dependence of the damping effect, as well as a shift of the resonance peaks from the presence of channel ungated regions.