Bismuth telluride nanostructures: preparation, thermoelectric properties and topological insulating effect

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• 作者：Eric Ashalley ; Haiyuan Chen ; Xin Tong ; Handong Li…
• 关键词：Bi2Te3 nanostructure ; thermoelectric property ; topological insulator (TI)
• 刊名：Frontiers of Materials Science
• 出版年：2015
• 出版时间：June 2015
• 年：2015
• 卷：9
• 期：2
• 页码：103-125
• 全文大小：8,352 KB
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• 作者单位：Eric Ashalley (1)
  Haiyuan Chen (2)
  Xin Tong (1)
  Handong Li (2)
  Zhiming M. Wang (1) (2)
  
  1. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
  2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Materials Science
  Chemistry
  Chinese Library of Science
  
• 出版者：Higher Education Press, co-published with Springer-Verlag GmbH
• ISSN：2095-0268

文摘

Bismuth telluride is known to wield unique properties for a wide range of device applications. However, as devices migrate to the nanometer scale, significant amount of studies are being conducted to keep up with the rapidly growing nanotechnological field. Bi₂Te₃ possesses distinctive properties at the nanometer level from its bulk material. Therefore, varying synthesis and characterization techniques are being employed for the realization of various Bi₂Te₃ nanostructures in the past years. A considerable number of these works have aimed at improving the thermoelectric (TE) figure-of-merit (ZT) of the Bi₂Te₃ nanostructures and drawing from their topological insulating properties. This paper reviews the various Bi₂Te₃ and Bi₂Te₃-based nanostructures realized via theoretical and experimental procedures. The study probes the preparation techniques, TE properties and the topological insulating effects of 0D, 1D, 2D and Bi₂Te₃ nanocomposites. With several applications as a topological insulator (TI), the topological insulating effect of the Bi₂Te₃ is reviewed in detail with the time reversal symmetry (TRS) and surface state spins which characterize TIs. Schematics and preparation methods for the various nanostructural dimensions are accordingly categorized.