Investigation of the Purcell effect in GaN-based vertical LED structures using FDTD simulation

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• 作者：Han-Youl Ryu
• 关键词：LED ; Spontaneous emission ; Purcell factor ; FDTD ; Internal quantum efficiency
• 刊名：Optical and Quantum Electronics
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：48
• 期：1
• 全文大小：758 KB
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• 作者单位：Han-Youl Ryu (1)
  
  1. Department of Physics, Inha University, Incheon, 402-751, Korea
  
• 刊物主题：Optics, Optoelectronics, Plasmonics and Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks;
• 出版者：Springer US
• ISSN：1572-817X

文摘

The spontaneous emission (SE) rate in GaN-based vertical light-emitting diode (LED) structures can be modified significantly depending on the local density of states near the high-reflectance mirror. In this study, this Purcell effect in vertical LED structures is investigated numerically using finite-difference time-domain simulation. The Purcell factor of vertical LED structures is found to vary periodically with the p-GaN thickness, while it is almost independent of the n-GaN thickness, indicating strong influence of the p-type electrode reflector on the SE modification. The peak of the Purcell factor is obtained to be as high as 1.5 at a properly chosen p-GaN thickness, which leads to substantial increase in the internal quantum efficiency (IQE) of LEDs. Since the influence of the Purcell factor on IQE becomes more conspicuous as IQE decreases, the Purcell effect of vertical LED structures is expected to mitigate the green-gap and the efficiency droop problems of current LED technologies. Keywords LED Spontaneous emission Purcell factor FDTD Internal quantum efficiency