用户名: 密码: 验证码:
Planar square spiral inductor generated through indium–tin oxide film removal by using UV laser ablation
详细信息    查看全文
  • 作者:Ching-Ching Yang ; Min-Wei Hung ; Hsin-Yi Tsai ; Wen-Ning Chuang…
  • 刊名:Applied Physics A: Materials Science & Processing
  • 出版年:2016
  • 出版时间:April 2016
  • 年:2016
  • 卷:122
  • 期:4
  • 全文大小:3,225 KB
  • 参考文献:1.J. Yick, B. Mukherjee, D. Ghosal, Comput. Netw. 52, 2292 (2008)CrossRef
    2.C. Buratti, A. Conti, D. Dardari, R. Verdone, Sensor 9, 6869 (2009)CrossRef
    3.G. Rezazadeh, A. Keyvani, S. Jafarmadar, Measurement 45, 580 (2012)CrossRef
    4.D.C. Abeysinghe, S. Dasgupta, J.T. Boyd, H.E. Jackson, Sensor 9, 6200 (2009)CrossRef
    5.J.L.M. Rupp, U.P. Muecke, P.C. Nalam, L.J. Gauckler, J. Power Source 195(9), 2669 (2010)CrossRef
    6.T. Sato, H. Tomita, A. Sawabe, T. Inoue, T. Mizoguchi, M. Sahashi, IEEE Trans. Magn. 30(2), 217 (1994)ADS CrossRef
    7.M. Schaefer, J. Holtkamp, A. Gillner, Synth. Met. 161, 1051 (2011)CrossRef
    8.C.B. Aronld, H. Kim, A. Pique, Appl. Phys. A 79(3), 417 (2004)ADS CrossRef
    9.H. Yu, H. Shin, M. Lee, Curr. Appl. Phys. 11, 179 (2011)CrossRef
    10.C.C. Yang, H.Y. Tsai, C.C. Yang, W.T. Hsiao, K.C. Huang, Appl. Phys. A 117(1), 69 (2014)ADS CrossRef
    11.T. Gotz, M. Stuke, Appl. Phys. A 64(6), 539 (1997)ADS CrossRef
    12.R.P. Ribas, J. Lescot, J.L. Leclercq, J.M. Karam, F. Ndagijimana, IEEE Trans. Microw Theory Tech. 48(8), 1326 (2000)ADS CrossRef
    13.N. Klejwa, R. Misra, J. Provine, R.T. Howe, S.J. Klejwa, J. Vac. Sci. Tech. B 27, 2745 (2009)CrossRef
    14.S.S. Mohan, M.D.M. Hershenson, S.P. Boyd, T.H. Lee, IEEE J. Solid-State Circuit 34(10), 1419 (1999)CrossRef
    15.A.R. Lopez, IEEE Antennas Propag. Mag. 48(4), 28 (2006)ADS CrossRef
    16.H.M. Greenhouse, IEEE Trans. Parts, Hybrids Packag. 10(2), 101 (1974)CrossRef
    17.S.F. Tseng, W.T. Hsiao, K.C. Huang, D. Chiang, Appl. Surf. Sci. 257, 8813 (2011)ADS CrossRef
    18.G. Vandevoorde, R. Puers, Sens. Actuators A Phys. 92(1), 305 (2001)CrossRef
  • 作者单位:Ching-Ching Yang (1)
    Min-Wei Hung (1)
    Hsin-Yi Tsai (1)
    Wen-Ning Chuang (1)
    Kuo-Cheng Huang (1)

    1. National Applied Research Laboratories, Instrument Technology Research Center, Hsinchu, 30076, Taiwan
  • 刊物类别:Physics and Astronomy
  • 刊物主题:Physics
    Condensed Matter
    Optical and Electronic Materials
    Nanotechnology
    Characterization and Evaluation Materials
    Surfaces and Interfaces and Thin Films
    Operating Procedures and Materials Treatment
  • 出版者:Springer Berlin / Heidelberg
  • ISSN:1432-0630
文摘
Induction efficiency is the evaluation index for measuring the induced voltage of a wireless-sensing module, and this index is affected by the electric properties, shape, number, and position of inductances. In this study, indium–tin oxide with a thickness of 30 nm was coated on a glass substrate to fabricate a planar square spiral inductor (PSSI), and patterns were then ablated using a UV laser with a wavelength of 355 nm. Single and array patterns with different dimensions were designed to investigate the variation of induction efficiency. The results indicated that the 3 × 3 PSSI array ablated at a frequency of 100 kHz and that a scanning speed of 1000 mm/s had the highest induction efficiency of 6.4 %, which was 2.4 % higher than that of PSSIs that ablated at other processing parameters. The induction efficiency could be enhanced, but the uniformity of sensing decreased as the array number decreased, and the highest induction efficiency of 10 % and highest variation of 7.2 % were caused by position deviation, which was obtained from a single pattern. In addition, the induction efficiency of 3.2 % was obtained from the 4 × 4 array pattern, and the variation caused by the position was controlled to less than 0.8 %. The results showed the specific relationship among the dimensions, number of patterns, and induction efficiency. The designed inductances can be applied to micro wireless-sensing modules in the future.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700