Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devices

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• 作者：Kai-Huang Chen ; Kuan-Chang Chang ; Ting-Chang Chang ; Tsung-Ming Tsai…
• 刊名：Applied Physics A: Materials Science & Processing
• 出版年：2016
• 出版时间：March 2016
• 年：2016
• 卷：122
• 期：3
• 全文大小：1,536 KB
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• 作者单位：Kai-Huang Chen (1)
  Kuan-Chang Chang (2)
  Ting-Chang Chang (3) (4)
  Tsung-Ming Tsai (2)
  Kuo-Hsiao Liao (2)
  Yong-En Syu (5)
  Simon M. Sze (6)
  
  1. Department of Electronics Engineering and Computer Science, Tung-Fang Design Institute, Kaohsiung, Taiwan
  2. Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan
  3. Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan
  4. Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, Taiwan
  5. Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan
  6. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Condensed Matter
  Optical and Electronic Materials
  Nanotechnology
  Characterization and Evaluation Materials
  Surfaces and Interfaces and Thin Films
  Operating Procedures and Materials Treatment
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1432-0630

文摘

To effectively lower the power consumption effect of Sn:SiO₂ RRAM devices, the electrical hopping conduction mechanism for set/reset state was effectively used and achieved by different constant compliance current forming process. To assume and discuss the tin metal clustered reaction and electron transport behaviors in metallic filament path-forming model, the various electrical switching current and conduction mechanism model of the Sn:SiO₂ RRAM devices for different constant compliance current were also investigated and described. Finally, the switching current relationship between hopping conduction energy and average inter-trap distance properties of the RRAM devices was also simulated and demonstrated in this study.