Comparative Study on Statistical-Variation Tolerance Between Complementary Crossbar and Twin Crossbar of Binary Nano-scale Memristors for Pattern Recognition

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• 作者：Son Ngoc Truong ; SangHak Shin ; Sang-Don Byeon ; JaeSang Song…
• 关键词：Statistical ; variation tolerance ; Complementary crossbar ; Twin crossbar ; Binary memristors ; Memristor array ; Pattern recognition
• 刊名：Nanoscale Research Letters
• 出版年：2015
• 出版时间：December 2015
• 年：2015
• 卷：10
• 期：1
• 全文大小：2,036 KB
• 刊物主题：Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine;
• 出版者：Springer US
• ISSN：1556-276X

文摘

This paper performs a comparative study on the statistical-variation tolerance between two crossbar architectures which are the complementary and twin architectures. In this comparative study, 10 greyscale images and 26 black-and-white alphabet characters are tested using the circuit simulator to compare the recognition rate with varying statistical variation and correlation parameters.