Modeling, fabrication and measurement of a novel CMOS UV/blue-extended photodiode

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• 作者：Chang-ping Chen (1)
  Yong-jia Zhao (1)
  Xiao-ya Zhou (1)
  Xiang-liang Jin (1)
  Hong-jiao Yang (1)
  Jun Luo (2)
  
• 关键词：device simulation ; numerical modeling ; ultraviolet responsivity ; photoelectric characteristics ; avalanche breakdown voltage ; silicon
• 刊名：Journal of Central South University
• 出版年：2014
• 出版时间：October 2014
• 年：2014
• 卷：21
• 期：10
• 页码：3821-3827
• 全文大小：1,539 KB
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• 作者单位：Chang-ping Chen (1)
  Yong-jia Zhao (1)
  Xiao-ya Zhou (1)
  Xiang-liang Jin (1)
  Hong-jiao Yang (1)
  Jun Luo (2)
  
  1. Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan, 411105, China
  2. School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, 200444, China
  
• ISSN：2227-5223

文摘

A new complementary metal oxide semiconductor UV/blue-extended photodiode was presented for light detection in the UV/blue spectral range. Photoelectric characteristics of this presented photodiode were studied by numerical modeling and device simulation. Technology computer aided design simulation was done first to analyze its photoelectric characteristics. The structure characteristic and depletion situation of space between two adjacent P+ anodes were discussed. The reverse characteristic, spectral response characteristic and DC characteristic were discussed in detail. For the numerical modeling, dead layer effect is considered in the building of analytical mode. Dead layer is a space in which the boron doping profile decreases towards the surface due to high doping effects and boron redistribution, which affects the sensitivity of photodiode in the UV range seriously. Reverse characteristics and spectral response characteristics were modeled and analyzed typically. At last, silicon test results were given and compared with the simulated result, which shows reasonable match for each.