On-printed circuit board emulator with controllability of pinched hysteresis loop for nanoscale \(\mathrm{TiO}_2\) thin-film memristor device

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• 作者：Van Ha Nguyen ; Keun Yong Sohn ; Hanjung Song
• 刊名：Journal of Computational Electronics
• 出版年：2016
• 出版时间：September 2016
• 年：2016
• 卷：15
• 期：3
• 页码：993-1002
• 全文大小：2,931 KB
• 刊物类别：Engineering
• 刊物主题：Electronic and Computer Engineering
  Optical and Electronic Materials
  Mathematical and Computational Physics
  Applied Mathematics and Computational Methods of Engineering
  Mechanical Engineering
  
• 出版者：Springer Netherlands
• ISSN：1572-8137
• 卷排序：15

文摘

Since real memristor devices are still not commercially available to most researchers, modeling a memristor is an effective method to explore its properties. In this paper, a flux-controlled memristor emulator circuit that can correctly mimic the memristive behavior of a real nanoscale \(\mathrm{TiO}_2\) thin-film memristor device is presented. The mathematical equations for the proposed emulator are explicitly derived, and the design parameters for the circuit in which the emulator works as a passive memristor with positive memductance are discussed. In addition, the proposed emulator can produce various v–i hysteretic behaviors by controlling the nonlinear polynomial cubic function between the flux and charge inside. The results from numerical simulations in PSpice and MATLAB, as well as the measured results from an implemented emulator circuit on a printed circuit board using off-the-shelf electronics components, demonstrate that a controllable emulator can actually be constructed. This study serves as a foundation for understanding and designing different emulators for nanoscale \(\mathrm{TiO}_2\) thin-film memristors at the laboratory level.KeywordsMemristor emulatorThin-film \(\mathrm{TiO}_2\) memristorModelingNanoscale deviceMemristive behavior