Writing Ferroelectric Nanodomains in PZT Thin Film at Low Temperatures

详细信息    查看全文

• 关键词：Ferroelectric thin films ; Piezoresponse force microscopy ; Ferroelectric domain dynamics ; Low temperatures
• 刊名：Lecture Notes in Computer Science
• 出版年：2016
• 出版时间：2016
• 年：2016
• 卷：9870
• 期：1
• 页码：708-716
• 全文大小：2,946 KB
• 参考文献：1.Aizu, K.: Possible species of ferromagnetic, ferroelectric, and ferroelastic crystals. Phys. Rev. B. 2, 754 (1970)CrossRef
  2.Dubois, M.A., Muralt, P.: PZT thin film actuated elastic fin micromotor. Ferroelectrics Freq. Control 45(5), 1169–1177 (1998)CrossRef
  3.Luginbuhl, P., et al.: Microfabricated lamb wave device based on PZT sol-gel thin film for mechanical transport of solid particles and liquids. Microelectromech. Syst. 6(4), 337–346 (1997)CrossRef
  4.Nemirovsky, Y., Nemirovsky, A., Muralt, P., Setter, N.: Design of novel thin-film piezoelectric accelerometer. Sens. Actuators A: Phys. 56(3), 239–249 (1996)CrossRef
  5.Ledermann, N., et al.: Piezoelectric cantilever microphone for photoacoustic GAS Detector. Integr. Ferroelectrics 35, 177–184 (2001)CrossRef
  6.Fujii, T., Watanabe, S.: Feedback positioning cantilever using lead zirconatetitanate thin film for force microscopy observation of micropattern. Appl. Phys. Lett. 68, 467–468 (1996)CrossRef
  7.Park, J.Y., Yee, Y.J., Nam, H.J., Bu, J.U.: Micromachined RF MEMS tunable capacitors using piezoelectric actuators. In: IEEE Microwave Symposium Digest, vol. 3, pp. 2111–2114 (2001)
  8.Baborowski, J., Ledermann, N., Muralt, P., Schmitt, D.: Simulation and characterization of piezoelectric micromachined ultrasonic transducers (pMUTs) based on PZT/SOI membranes. Int. J. Comput. Eng. Sci. 4(3), 471–475 (2003)CrossRef
  9.Bernstein, J.J., et al.: Micromachined high frequency ferroelectric sonar transducers. Ferroelectrics Freq. Control 44(5), 960–969 (1997)CrossRef
  10.Ganpule, C.S., et al.: Polarization relaxation kinetics and 180° domain wall dynamics in ferroelectric thin films. Phys. Rev. B 65, 014101 (2001)CrossRef
  11.Tybell, T., et al.: Domain wall creep in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films. Phys. Rev. Lett. 89, 097601 (2002)CrossRef
  12.Pertsev, N.A., et al.: Dynamics of ferroelectric nanodomains in BaTiO3 epitaxial thin films via piezoresponse force microscopy. Nanotechnology 19, 375703 (2008)CrossRef
  13.Andreeva, N.V., Vakulenko, A.F., Petraru, A., et al.: Low-temperature dynamics of ferroelectric domains in PbZr0.3Ti0.7O3 epitaxial thin films studied by piezoresponse force microscopy. Appl. Phys. Lett. 107, 152904 (2015)CrossRef
  14.Yan, C., Minglei, Y., Qunying, Z., et al.: Properties of RF-sputtered PZT thin films with Ti/Pt electrodes. Int. J. Polym. Sci. 2014 (2014). Article ID 574684
  15.Basu, T., Sen, S., Seal, A., Sen, A.: Temperature dependent electrical properties of PZT wafer. J. Electron. Mater. 45, 2252–2257 (2016)CrossRef
  16.Kawada, S., Niinuma, J.: Curie-Weiss behavior of the static dielectric constant of the debye component in Ice Ih. J. Phys. Soc. Jpn. 43, 715 (1977)CrossRef
  
• 作者单位：Alexandr Vakulenko (16)
  Natalia Andreeva (16)
  Sergej Vakhrushev (16) (17) (18)
  Alexandr Fotiadi (16)
  Alexey Filimonov (16)
  
  16. Peter the Great St. Petersburg Polytechnic University, 195251, Polytechnicheskaya 29, St.-Petersburg, Russia
  17. Ioffe Institute, 194021, Polytechnicheskaya 26, St.-Petersburg, Russia
  18. Saint-Petersburg State University, 199504, Ulyanovskaya str., 1, Petrodvorets, Russia
  
• 丛书名：Internet of Things, Smart Spaces, and Next Generation Networks and Systems
• ISBN：978-3-319-46301-8
• 刊物类别：Computer Science
• 刊物主题：Artificial Intelligence and Robotics
  Computer Communication Networks
  Software Engineering
  Data Encryption
  Database Management
  Computation by Abstract Devices
  Algorithm Analysis and Problem Complexity
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1611-3349
• 卷排序：9870

文摘

Thin ferroelectric films are prospective materials for applications in the area of tunable microwave electronics as a base for varactors, phase shifters, delay lines, tunable filters and antennas. The most important technological aspect of using thin polar films in electronics is a possibility of miniaturization. By means of piezoresponse force microscopy technique, it is possible to create nanometer-sized areas (or ferroelectric domains) in thin films with preferable direction of polarization. Besides the fact that these domains could be used as a bit for mass storage application, it was found, that domain walls have their own properties, moreover, they are mobile. This circumstance could give rise to a new type of technology where mobile domain walls will be the “active ingredient” of the device.