Improved fatigue property of hafnium substitute lead zirconate titanate deposited by pulse laser deposition

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• 作者：Zhipeng Wu ; Jun Zhu ; Xingpeng Liu
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：28
• 期：2
• 页码：1819-1823
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials;
• 出版者：Springer US
• ISSN：1573-482X
• 卷排序：28

文摘

Lead hafnate titanate (PHT) thin film was deposited by pulse laser deposition, characterized for the usage as a ferroelectric capacitor in view of Ferroelectric Random Access Memory (FeRAM) devices, and compared with a lead zirconate titanate (PZT) reference, which was fabricated in the same conditions. Results indicate that the 126 nm-thickness PHT thin film with a low temperature self-buffer layer has a single (111)-orientation. The following electric measurements were performed to investigate the possibility of this thin film to use in the FeRAM applications by contrast to a PZT reference. This PHT sample demonstrates a good ferroelectric property with the remanent polarization of 51 μC/cm2. The remanent polarization with no obvious degradation has been observed after 2 × 109 fatigue reversals, which indicate that the PHT thin film a promising candidate in view of FeRAM applications.