Al₂O₃–Cu₂O composite charge-trapping nonvolatile memory

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• 作者：Jinqiu Liu ; Jianxin Lu ; Bo Xu ; Yidong Xia…
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：28
• 期：1
• 页码：928-933
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials;
• 出版者：Springer US
• ISSN：1573-482X
• 卷排序：28

文摘

In this work, we have fabricated and thoroughly characterized dielectric-stacked memory devices with Al₂O₃–Cu₂O composites as the charge trapping layer which are prepared by using atomic layer deposition and RF-magnetron sputtering techniques. The devices exhibit a large memory window of 13.27 V and a density of the trapped charges of 9.37 × 1012 cm−2 at a working voltage of ±11 V. The microstructural observations by using high resolution transmission electron microscopy and the analysis on X-ray photoelectron spectroscopy indicate that the strong charge-trapping ability of Al₂O₃–Cu₂O composite should be ascribed to the occurrence of Cu2+, resulted by the inter-diffusion at the interface of Cu₂O/Al₂O₃. Such an interesting composite layer has very attractive application in nonvolatile memory.