Experimental demonstration of sequence recognition of serial memristors

详细信息    查看全文

• 作者：Son Ngoc Truong ; Khoa Van Pham ; Wonsun Yang ; Anjae Jo…
• 关键词：sequence recognition ; serial memristors ; memristor crossbar
• 刊名：Electronic Materials Letters
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：13
• 期：1
• 页码：86-90
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Condensed Matter Physics; Nanotechnology and Microengineering; Characterization and Evaluation of Materials; Nanotechnology;
• 出版者：The Korean Institute of Metals and Materials
• ISSN：2093-6788
• 卷排序：13

文摘

The sequence recognition is very essential in mimicking brain’s neocortical function because most of input patterns to brain’s neocortex are dynamically changing over time, not static regardless of time. In this paper, we experimentally demonstrate the sequence recognition for various input sequences using serial memristors, for the first time. In this experiment, the serial memristors are used, which were fabricated with carbon fiber and aluminum film on glass substrate. To verify the sequence recognition, we store the following 3 sequences in the fabricated serial memristors, which are ‘A’→‘B’→‘C’, ‘B’→‘A’→‘C’, and ‘C’→‘B’→‘A’, respectively. By performing this experiment, it is verified the serial memristors are changed to Low Resistance State only when the input sequence matches the stored one. When the input sequence is different from the stored one, the serial memristors remain unchanged. The simple voltage comparator can be used to sense the output voltage to indicate whether the sequence matching happens or not. This experimental demonstration can be very useful to realize memristor crossbars which can process the temporal and sequential patterns in future.