Numerical Investigation of InGaN Light-Emitting Diode with Al/In-Graded p-AlGaN/InGaN Superlattice Electron-Blocking Layer

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• 作者：Si-Ming Zeng ; Shu-Wen Zheng ; Guang-Han Fan
• 关键词：Light ; emitting diodes ; AlGaN/InGaN superlattice ; numerical simulation ; efficiency droop
• 刊名：Journal of Electronic Materials
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：46
• 期：2
• 页码：1100-1106
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials; Electronics and Microelectronics, Instrumentation; Solid State Physics;
• 出版者：Springer US
• ISSN：1543-186X
• 卷排序：46

文摘

Three kinds of InGaN/GaN multiple-quantum-well light-emitting diode with different electron-blocking layers (EBLs) have been investigated numerically. The energy band diagrams, light–current curves, voltage–current curves, electrostatic fields, carrier concentrations in the quantum wells, electron current densities, radiative recombination rates in active region, and internal quantum efficiency (IQE) are reported. The results show that, when the conventional AlGaN EBL is replaced by a p-AlGaN/InGaN superlattice EBL or graded p-Al_yGa_1−yN/In_xGa_1−xN superlattice EBL, respectively, the light output power at 200 mA can be increased by 46.0% and 52.8%, the turn-on voltage can be decreased from 3.2 V to 3.0 V, the IQE can be increased by 45.6% and 53.8% at 200 mA, and the efficiency droop can be reduced from 31.2% to 21.6%. These improvements are mainly attributed to the properly modified energy band structures which favor carrier injection.