Role of the carrier gas flow rate in monolayer MoS₂ growth by modified chemical vapor deposition

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• 作者：Hengchang Liu ; Yuanhu Zhu ; Qinglong Meng ; Xiaowei Lu ; Shuang Kong…
• 关键词：MoS2 ; monolayer ; carrier gas flow rate ; modified CVD
• 刊名：Nano Research
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：10
• 期：2
• 页码：643-651
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Nanotechnology; Materials Science, general; Atomic/Molecular Structure and Spectra; Condensed Matter Physics; Biotechnology; Biomedicine, general;
• 出版者：Tsinghua University Press
• ISSN：1998-0000
• 卷排序：10

文摘

Monolayer molybdenum disulfide (MoS₂) has attracted much attention because of the variety of potential applications. However, its controlled growth is still a great challenge. Here, we report a modified chemical vapor deposition method to grow monolayer MoS₂. We observed that the quality of the MoS₂ crystals could be greatly improved by tuning the carrier gas flow rate during the heating stage. This subtle modification prevents the uncontrollable reaction between the precursors, a critical factor for the growth of high-quality monolayer MoS₂. Based on an optimized gas flow rate, the MoS₂ coverage and flake size can be controlled by adjusting the growth time.