The photoluminescence characterization of the N-doped ZnO films produced by wet chemical deposition

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• 作者：Yue Zhao (1) zhaoyue1976@sohu.com
  Xiang Peng (1)
  Zhao Li (1)
  Mingtao Zhou (1)
  Xiaoyan Liang (1)
  Jian Wang (1)
  Jiahua Min (1)
  Linjun Wang (1)
  Weimin Shi (1)
• 关键词：ZnO – ; Wet chemical method – ; Low temperature photoluminescence
• 刊名：Applied Physics A: Materials Science & Processing
• 出版年：2012
• 出版时间：June 2012
• 年：2012
• 卷：107
• 期：4
• 页码：959-963
• 全文大小：425.4 KB
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• 作者单位：1. Department of Electronic Information Materials, Shanghai Leading Academic Disciplines, Shanghai University, Shanghai, 200072 People鈥檚 Republic of China
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Condensed Matter
  Optical and Electronic Materials
  Nanotechnology
  Characterization and Evaluation Materials
  Surfaces and Interfaces and Thin Films
  Operating Procedures and Materials Treatment
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1432-0630

文摘

The ZnO:N films are prepared by a wet chemical method. The temperature-dependent photoluminescence (PL) is used to investigate those ZnO: N films. Due to the introduction of nitrogen atoms into ZnO film, another phase appears in the ZnO film, which can release the stress and improve the film quality. As a result, a neutral donor-bound exciton (D0X) emission peak is shown in low temperature PL spectrum. With the increasing temperature, the D0X line gradually loses its intensity and shifts to 3.30 eV, which is consistent with the well-known conversion from bound exciton to free exciton at elevated temperatures. Then, due to the thermal quenching effect, the D0X line vanishes in room temperature. In addition, no shift is shown in the location of visible band emission and only the intensity decreases with the increasing temperature.