Cu-Al alloy formation by thermal annealing of Cu/Al multilayer films deposited by cyclic metal organic chemical vapor deposition

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• 作者：Hock Key Moon (13034)
  Jaehong Yoon (23034)
  Hyungjun Kim (23034)
  Nae-Eung Lee (13034) (33034)
  
• 关键词：alloys ; vapor deposition ; metals ; electrical properties ; grain growth
• 刊名：Metals and Materials International
• 出版年：2013
• 出版时间：May 2013
• 年：2013
• 卷：19
• 期：3
• 页码：611-616
• 全文大小：1053KB
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• 作者单位：Hock Key Moon (13034)
  Jaehong Yoon (23034)
  Hyungjun Kim (23034)
  Nae-Eung Lee (13034) (33034)
  
  13034. School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 440-746, Korea
  23034. School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul, 120-749, Korea
  33034. SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do, 440-746, Korea
  
• ISSN：2005-4149

文摘

One of the most important issues in future Cu-based interconnects is to suppress the resistivity increase in the Cu interconnect line while decreasing the line width below 30 nm. For the purpose of mitigating the resistivity increase in the nanoscale Cu line, alloying Cu with traces of other elements is investigated. The formation of a Cu alloy layer using chemical vapor deposition or electroplating has been rarely studied because of the difficulty in forming Cu alloys with elements such as Al. In this work, Cu-Al alloy films were successfully formed after thermal annealing of Cu/Al multilayers deposited by cyclic metal-organic chemical vapor deposition (C-MOCVD). After the C-MOCVD of Cu/Al multilayers without gas phase reaction between the Cu and Al precursors in the reactor, thermal annealing was used to form Cu-Al alloy films with a small Al content fraction. The resistivity of the alloy films was dependent on the Al precursor delivery time and was lower than that of the aluminum-free Cu film. No presence of intermetallic compounds were detected in the alloy films by X-ray diffraction measurements and transmission electron spectroscopy.