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Dielectric and Impedance Spectroscopy of Barium Orthoniobate Ceramic
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  • 作者:Biswajit Pati (1)
    R.N.P. Choudhary (1)
    Piyush R. Das (1)
    B.N. Parida (1)
    R. Padhee (1)
  • 关键词:Electroceramics ; impedance analysis ; bulk resistance ; electric modulus analysis
  • 刊名:Journal of Electronic Materials
  • 出版年:2013
  • 出版时间:June 2013
  • 年:2013
  • 卷:42
  • 期:6
  • 页码:1225-1234
  • 全文大小:913KB
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  • 作者单位:Biswajit Pati (1)
    R.N.P. Choudhary (1)
    Piyush R. Das (1)
    B.N. Parida (1)
    R. Padhee (1)

    1. Department of Physics, Institute of Technical Education and Research, SOA University, Bhubaneswar, India
  • ISSN:1543-186X
文摘
Barium orthoniobate (Ba3Nb2O8), a derivative of the perovskite family, was prepared using a high-temperature solid-state reaction technique (calcination temperature?=?1425°C and sintering temperature?=?1450°C for 4?h). Preliminary x-ray structural analysis with room-temperature x-ray diffraction data confirmed the formation of a single-phase compound with hexagonal crystal structure. Study of the microstructure of a gold-coated pellet by scanning electron microscopy (SEM) showed that the sample has well-defined grains that are distributed uniformly throughout the surface of the sample. Detailed studies showed that the dielectric parameters (ε r and tan?δ) of the compound at three different frequencies (10?kHz, 100?kHz, and 1000?kHz) are almost constant in the low-temperature region (from room temperature to about 200°C). An anomaly in the relative permittivity (ε r) (?57°C) suggests the possible existence of a ferroelectric–paraelectric phase transition of diffuse type in the material. Detailed studies of impedance and related parameters show that the electrical properties of the material are strongly dependent on temperature, showing good correlation with its microstructure. The bulk resistance (evaluated from impedance studies) is found to decrease with increasing temperature. This shows that the material has negative temperature coefficient of resistance (NTCR), similar to that of semiconductors. Studies of electric modulus indicate the presence of a hopping conduction mechanism in the system with nonexponential-type conductivity relaxation. The nature of the variation of the direct-current (dc) conductivity with temperature confirms the Arrhenius and NTCR behavior in the material. The alternating-current (ac) conductivity spectra show a typical signature of an ionic conducting system and are found to obey Jonscher’s universal power law.

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