面元像素CdZnTe高能辐射探测器原理、系统及特性研究
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摘要
最近几年来，国际空间站计划的开始实施及国家大科学装置“神光III原型”、“大天区面积多目标光纤光谱望远镜”(LAMOST)的建成标志着国家在航空航天、高能物理及天文学等科研领域都取得了具有里程碑意义的重大成果。而作为这一系列重大科研计划的重要技术支撑，对10keV～1000keV能区辐射诊断技术的研究也具有极其重要的科研意义。而基于面元像素电极碲锌镉(CdZnTe)晶体材料的核辐射探测器由于对高能射线具备优异的能量分辨率性能及探测效率，正逐渐成为目前半导体核辐射探测技术的研究热点。
到目前为止，国内外CdZnTe探测器件的研究存在较大差距。国内相关研究尚处于起步阶段，主要研究方向是CdZnTe晶体生长及表面处理工艺；国外相关研究主要针对探测器收集电极结构的改变、探测器权重势分布理论及相关脉冲信号电子学处理技术的改进。近年来，科研人员在提高CdZnTe探测器能量分辨率的研究工作方面取得了大量卓有成效的进展，但在面元像素CdZnTe探测技术的相关研究领域内，目前的研究还存在若干明显问题。其中包括大面积面元像素CdZnTe成像探测系统的制备问题以及如何结合目前的成像传递函数理论评价探测器成像质量等问题。更进一步而言，在高能辐射成像探测领域，如何更深入地从载流子迁移及感应信号收集理论方面对探测器最终成像信号变化进行讨论分析？在极端探测条件下，CdZnTe探测器的探测性能是否会受到影响？
针对以上问题，同时为了完善面元像素CdZnTe探测器在10keV～1000keV能区核辐射能谱探测及成像探测领域的研究结构体系，在国家自然科学基金项目(No.10876044)及中央高校基本科研业务费资助项目(No. CDJXS11122219)资助下，开展了面元像素CdZnTe高能核辐射探测技术的基础研究工作。围绕所提出的科学问题，论文主要进行了如下研究工作
1.研究讨论了CdZnTe晶体与射线光子的相互作用，分析了不同能量不同性质粒子在CdZnTe晶体内部的传输与衰减。根据CdZnTe探测器基本原理讨论了晶体内部载流子电荷的收集特性，分析了多种不同电极结构CdZnTe晶体的权重势分布，为进行面元像素阵列CdZnTe探测系统的深入研究奠定了必要的理论基础，提供了研究思路。
2.基于CdZnTe晶体表面漏电流理论，测试研究了2×2及4×4像素CdZnTe晶体的表面漏电流分布，针对面元像素CdZnTe晶体漏电流特性及输出信号特点制备了基于前置放大芯片的读出电路系统。进一步采用极零相消电路及Sallen-Key滤波器设计实现了信号脉冲整形电路并制备了多级整形放大电路系统。根据实验测试所得CdZnTe探测器数字脉冲信号，研究了相应的能谱获取及修正方法。通过编写寻峰程序实现了数字脉冲信号的寻峰处理及能谱统计。以降低面元像素CdZnTe探测器像素单元边缘效应对能量分辨率的影响为目的，提出了基于数字脉冲信号的幅度修正算法，较明显地提高了探测器边缘像素单元的能量分辨率。
3.探讨了面元像素CdZnTe探测器的成像机理，测试分析了所搭建CdZnTe成像探测系统的关键性能参数。基于针孔成像基本原理的分析，建立了高能射线针孔成像系统。数值计算并实验测试分析了成像系统的调制传递函数特性，结合数字图像处理理论提出基于Lucy-Richardson算法的探测退化图像复原方法并测试验证了该方法的优越性。
4.在CdZnTe晶体俘获载流子感应电荷理论的基础上，讨论并研究了俘获载流子在CdZnTe晶体电极表面所产生的感应电荷分布。通过建立阳极表面感应信号分布模型实现了CdZnTe晶体物理参数与探测器成像调制传递函数的关联；从载流子迁移理论出发，研究讨论了载流子迁移率等晶体物理特性对探测器成像性能的影响。
5.测试分析了面元像素CdZnTe探测系统在高强度辐照条件下的成像特性，讨论了探测器成像极化效应与系统物理参数间的关系。进一步研究并建立了晶体内部电势分布模型，基于解析计算及有限元仿真两种方法计算分析了CdZnTe晶体内部电势分布与初始空间电荷密度、辐射光子通量、外加偏压等物理参数的关系。采用有限元电势模型对实验过程中所发现的光生载流子屏蔽效应的波动变化过程进行了讨论研究，为极端实验条件下对CdZnTe探测器性能更深入的研究提供了必要的研究基础及思路。
In recent years, the implement of national space station program and theestablishment of the national science facilities, which include the prototype of“ShenGuang III” and the Large Sky Area Multi-Object Fiber Spectroscopy Telescope(LAMOST), are milestone of aerospace technology, high energy physics and astronomytechnology. And hence, the corresponding diagnostic technique for high energyradiation source also has important significance as the unique technology support ofthese major research plans. The pixellated Cadium Zinc Telluride (CdZnTe) irradiationdetector, which has excellent energy resolution and high detection efficiency, hasexperienced a rather rapid development due to the development of the semiconductorgrown technology in decades. And the pixellated CdZnTe detector are now investigatedin a large variety of fields, including nuclear physics, X-ray and Gamma ray astronomyand nuclear medicine.
As for now, the researches of grown technique to produce CdZnTe crystals with therequired good performance and the crystal surface process are the majority part of thedomestic investigation. The overseas researchers dedicate to the design of novelstructure electrode, the improvement of weighting potential theory of CdZnTe detectorand the implement of electrical signal process technique for the detector pulse. Thepurpose of all these works is the spectrum resolution improvement, which is carried outaccording to the improvement of the collection efficiency of the photon generatedcarriers in the CdZnTe crystal. Nevertheless, there are several realistic problems. Forexample, how to rise the detector resolution, improve the edge effect based on thedigital pulse processing method instead of the material grown method? How toevaluation the imaging quality of the large area pixellated CdZnTe with the modulationfunction theory? And during the high energy radiation imaging detection, how tocombine the induced signal theory, the experimental and theoretical results of the carrierdrift characteristic with the imaging signals? Thus, the evaluation of detector imagingperformance according to the carrier drift characteristic hasn’t been discussed.Moreover, the stability of CdZnTe detector under extreme condition hasn’t beeninvestigated. In this thesis, the corresponding researches for the problems mentionabove are investigated based on the support of National Natural Science Foundation ofChina (No.10876044) and the fundamental research funds for the central universities (CDJXS11122219). The main work of this thesis is provided as follows:
1. The basic principles of interaction theory between radiation particles andmaterials and the transmit attenuation theory of radiation particles are introduced. Theinteraction and transfers of different energy particles in CdZnTe material are discussed.The collection efficiency of carrier charge and weighting potential distribution fordifferent electrode CdZnTe detectors are analyzed based on the principle of CdZnTedetector. These pre-works establish the essential theoretical foundation for thepenetrated investigation of pixellated CdZnTe system, and also provide some researchideas.
2. The surface leakage current of2×2,4×4pixel array electrodes are tested andanalyzed based on the leakage theory of pixellated CdZnTe detector. The containmentmethod of noise signal resulted from the crystal leakage has been discussed. After theargumentation of signal processing principle for the preamplifier readout system and theshaping amplifier system, we fabricated the corresponding pulse shaping circuit whichintroduced the pole-zero cancellation circuit and Sallen-Key filter. In order to reduce theinfluence of noise signal which resulted from leakage current, the acquirement systemand corrected method for the digitization of probed CdZnTe detector pulse areinvestigated in detail. At first, according to the application of peak finding and spectrumstatic programs for digital pulse signal, the spectrum of Gamma source137Cs is obtainedin our experiment. Moreover, the implement of pulse amplitude corrected algorithmbased on the digital signal is presented for the purpose of spectroscopy responseimproving. The average energy resolution of corner pixels has been improved1.6%,and the best energy resolution of pixels achieved2.5%. The experimental resultsindicate that the energy resolution of4×4pixellated CdZnTe detector system isexcellent. The influence of edge pixel effect is substantially reduced, the resolution ofedge pixels get improved efficiently.
3. Based on the discussion of pinhole imaging theory, a pinhole imaging systemwith pixellated CdZnTe detector are constructed for the Gamma source. The energyresolution and peak efficiency of CdZnTe pixellated detector are tested and analyzed.During our preliminary experiments, modulation transfer function (MTF) and additionalnoise characteristic of pinhole imaging system were investigated and discussed. Wepresented and evaluated test image of5mm diameter137Cs gamma source. Themeasured pinhole images have been restored with the Lucy-Richardson algorithmsimultaneously. As shown through the experiment results, there was lateral spread information during source images and degraded image can be restored appropriatelywith the application of Lucy-Richardson algorithm. Inner area spatial resolution getsimproved through the restoration method and estimated source diameter has error0.5mm. Experiments indicated that pinhole imaging CdZnTe detector system could beapplied to the acquisition of gamma source intensity distribution while the dimensioninformation of small gamma source can be measured effectively.
4. With the discussion of induced charge signal distribution that caused by thetrapped carriers near the anode electrode for the CdZnTe detector, a novel analyticmodel which mainly considers the trapped carrier effect in the pixellated CdZnTedetector is obtained. The constructed numerical model carries out the combinationbetween the modulation transfer function of detector and the physical parameters of theCdZnTe material. Based on the simulated results and carrier drift theory, the pixellatedCdZnTe detector imaging performance, which influenced by the carrier drift and crystalcharacteristics, has been estimated for different carrier mobility-lifetime values andphoton energies. Moreover, a40×40mm2CdZnTe imaging system has beenestablished. The comparison of the presampling MTF shows that the simulation result iswell consistent with the experimental data.
5. Based on the established CdZnTe imaging system, the radiation imagingexperiment is accomplished with the Rh target X-ray source and the137Cs Gammasource. For the first time, the imaging polarization effect has been observed.Furthermore, the detector imaging characteristic that under extreme experimentalconditions are investigated according to the change of the physical parameters like tubevoltage, tube current, et.al. For the penetrated study of the polarization phenomenon, weestablish two kinds of models with analytic method and finite element method based onthe Poisson equation. Thus, the inner electric potential, the electric field distribution andthe space charge density of pixellated CdZnTe detector are simulated. The simulationresults reveal that the accumulation of the hole carriers, which resulted from theextremely low drift ability of the hole carrier, leads to a relatively highspace-charge-density area in the CdZnTe bulk when the increase of irradiated photonflux. And hence, the induced signal screen effect of the anode pixels in the centerirradiated area is mainly attributed to the distorted electric field which makes electroncarriers drifting toward the high potential area in the CdZnTe crystal instead of the pixelanodes. Particularly, the finite model predicts the fluctuant change of the polarizationeffect, which has been approved during our experiments. The detailed discussion has been presented with the increase of the incident photon energy in the finite elementmodel.
到目前为止，国内外CdZnTe探测器件的研究存在较大差距。国内相关研究尚处于起步阶段，主要研究方向是CdZnTe晶体生长及表面处理工艺；国外相关研究主要针对探测器收集电极结构的改变、探测器权重势分布理论及相关脉冲信号电子学处理技术的改进。近年来，科研人员在提高CdZnTe探测器能量分辨率的研究工作方面取得了大量卓有成效的进展，但在面元像素CdZnTe探测技术的相关研究领域内，目前的研究还存在若干明显问题。其中包括大面积面元像素CdZnTe成像探测系统的制备问题以及如何结合目前的成像传递函数理论评价探测器成像质量等问题。更进一步而言，在高能辐射成像探测领域，如何更深入地从载流子迁移及感应信号收集理论方面对探测器最终成像信号变化进行讨论分析？在极端探测条件下，CdZnTe探测器的探测性能是否会受到影响？
针对以上问题，同时为了完善面元像素CdZnTe探测器在10keV～1000keV能区核辐射能谱探测及成像探测领域的研究结构体系，在国家自然科学基金项目(No.10876044)及中央高校基本科研业务费资助项目(No. CDJXS11122219)资助下，开展了面元像素CdZnTe高能核辐射探测技术的基础研究工作。围绕所提出的科学问题，论文主要进行了如下研究工作
1.研究讨论了CdZnTe晶体与射线光子的相互作用，分析了不同能量不同性质粒子在CdZnTe晶体内部的传输与衰减。根据CdZnTe探测器基本原理讨论了晶体内部载流子电荷的收集特性，分析了多种不同电极结构CdZnTe晶体的权重势分布，为进行面元像素阵列CdZnTe探测系统的深入研究奠定了必要的理论基础，提供了研究思路。
2.基于CdZnTe晶体表面漏电流理论，测试研究了2×2及4×4像素CdZnTe晶体的表面漏电流分布，针对面元像素CdZnTe晶体漏电流特性及输出信号特点制备了基于前置放大芯片的读出电路系统。进一步采用极零相消电路及Sallen-Key滤波器设计实现了信号脉冲整形电路并制备了多级整形放大电路系统。根据实验测试所得CdZnTe探测器数字脉冲信号，研究了相应的能谱获取及修正方法。通过编写寻峰程序实现了数字脉冲信号的寻峰处理及能谱统计。以降低面元像素CdZnTe探测器像素单元边缘效应对能量分辨率的影响为目的，提出了基于数字脉冲信号的幅度修正算法，较明显地提高了探测器边缘像素单元的能量分辨率。
3.探讨了面元像素CdZnTe探测器的成像机理，测试分析了所搭建CdZnTe成像探测系统的关键性能参数。基于针孔成像基本原理的分析，建立了高能射线针孔成像系统。数值计算并实验测试分析了成像系统的调制传递函数特性，结合数字图像处理理论提出基于Lucy-Richardson算法的探测退化图像复原方法并测试验证了该方法的优越性。
4.在CdZnTe晶体俘获载流子感应电荷理论的基础上，讨论并研究了俘获载流子在CdZnTe晶体电极表面所产生的感应电荷分布。通过建立阳极表面感应信号分布模型实现了CdZnTe晶体物理参数与探测器成像调制传递函数的关联；从载流子迁移理论出发，研究讨论了载流子迁移率等晶体物理特性对探测器成像性能的影响。
5.测试分析了面元像素CdZnTe探测系统在高强度辐照条件下的成像特性，讨论了探测器成像极化效应与系统物理参数间的关系。进一步研究并建立了晶体内部电势分布模型，基于解析计算及有限元仿真两种方法计算分析了CdZnTe晶体内部电势分布与初始空间电荷密度、辐射光子通量、外加偏压等物理参数的关系。采用有限元电势模型对实验过程中所发现的光生载流子屏蔽效应的波动变化过程进行了讨论研究，为极端实验条件下对CdZnTe探测器性能更深入的研究提供了必要的研究基础及思路。
In recent years, the implement of national space station program and theestablishment of the national science facilities, which include the prototype of“ShenGuang III” and the Large Sky Area Multi-Object Fiber Spectroscopy Telescope(LAMOST), are milestone of aerospace technology, high energy physics and astronomytechnology. And hence, the corresponding diagnostic technique for high energyradiation source also has important significance as the unique technology support ofthese major research plans. The pixellated Cadium Zinc Telluride (CdZnTe) irradiationdetector, which has excellent energy resolution and high detection efficiency, hasexperienced a rather rapid development due to the development of the semiconductorgrown technology in decades. And the pixellated CdZnTe detector are now investigatedin a large variety of fields, including nuclear physics, X-ray and Gamma ray astronomyand nuclear medicine.
As for now, the researches of grown technique to produce CdZnTe crystals with therequired good performance and the crystal surface process are the majority part of thedomestic investigation. The overseas researchers dedicate to the design of novelstructure electrode, the improvement of weighting potential theory of CdZnTe detectorand the implement of electrical signal process technique for the detector pulse. Thepurpose of all these works is the spectrum resolution improvement, which is carried outaccording to the improvement of the collection efficiency of the photon generatedcarriers in the CdZnTe crystal. Nevertheless, there are several realistic problems. Forexample, how to rise the detector resolution, improve the edge effect based on thedigital pulse processing method instead of the material grown method? How toevaluation the imaging quality of the large area pixellated CdZnTe with the modulationfunction theory? And during the high energy radiation imaging detection, how tocombine the induced signal theory, the experimental and theoretical results of the carrierdrift characteristic with the imaging signals? Thus, the evaluation of detector imagingperformance according to the carrier drift characteristic hasn’t been discussed.Moreover, the stability of CdZnTe detector under extreme condition hasn’t beeninvestigated. In this thesis, the corresponding researches for the problems mentionabove are investigated based on the support of National Natural Science Foundation ofChina (No.10876044) and the fundamental research funds for the central universities (CDJXS11122219). The main work of this thesis is provided as follows:
1. The basic principles of interaction theory between radiation particles andmaterials and the transmit attenuation theory of radiation particles are introduced. Theinteraction and transfers of different energy particles in CdZnTe material are discussed.The collection efficiency of carrier charge and weighting potential distribution fordifferent electrode CdZnTe detectors are analyzed based on the principle of CdZnTedetector. These pre-works establish the essential theoretical foundation for thepenetrated investigation of pixellated CdZnTe system, and also provide some researchideas.
2. The surface leakage current of2×2,4×4pixel array electrodes are tested andanalyzed based on the leakage theory of pixellated CdZnTe detector. The containmentmethod of noise signal resulted from the crystal leakage has been discussed. After theargumentation of signal processing principle for the preamplifier readout system and theshaping amplifier system, we fabricated the corresponding pulse shaping circuit whichintroduced the pole-zero cancellation circuit and Sallen-Key filter. In order to reduce theinfluence of noise signal which resulted from leakage current, the acquirement systemand corrected method for the digitization of probed CdZnTe detector pulse areinvestigated in detail. At first, according to the application of peak finding and spectrumstatic programs for digital pulse signal, the spectrum of Gamma source137Cs is obtainedin our experiment. Moreover, the implement of pulse amplitude corrected algorithmbased on the digital signal is presented for the purpose of spectroscopy responseimproving. The average energy resolution of corner pixels has been improved1.6%,and the best energy resolution of pixels achieved2.5%. The experimental resultsindicate that the energy resolution of4×4pixellated CdZnTe detector system isexcellent. The influence of edge pixel effect is substantially reduced, the resolution ofedge pixels get improved efficiently.
3. Based on the discussion of pinhole imaging theory, a pinhole imaging systemwith pixellated CdZnTe detector are constructed for the Gamma source. The energyresolution and peak efficiency of CdZnTe pixellated detector are tested and analyzed.During our preliminary experiments, modulation transfer function (MTF) and additionalnoise characteristic of pinhole imaging system were investigated and discussed. Wepresented and evaluated test image of5mm diameter137Cs gamma source. Themeasured pinhole images have been restored with the Lucy-Richardson algorithmsimultaneously. As shown through the experiment results, there was lateral spread information during source images and degraded image can be restored appropriatelywith the application of Lucy-Richardson algorithm. Inner area spatial resolution getsimproved through the restoration method and estimated source diameter has error0.5mm. Experiments indicated that pinhole imaging CdZnTe detector system could beapplied to the acquisition of gamma source intensity distribution while the dimensioninformation of small gamma source can be measured effectively.
4. With the discussion of induced charge signal distribution that caused by thetrapped carriers near the anode electrode for the CdZnTe detector, a novel analyticmodel which mainly considers the trapped carrier effect in the pixellated CdZnTedetector is obtained. The constructed numerical model carries out the combinationbetween the modulation transfer function of detector and the physical parameters of theCdZnTe material. Based on the simulated results and carrier drift theory, the pixellatedCdZnTe detector imaging performance, which influenced by the carrier drift and crystalcharacteristics, has been estimated for different carrier mobility-lifetime values andphoton energies. Moreover, a40×40mm2CdZnTe imaging system has beenestablished. The comparison of the presampling MTF shows that the simulation result iswell consistent with the experimental data.
5. Based on the established CdZnTe imaging system, the radiation imagingexperiment is accomplished with the Rh target X-ray source and the137Cs Gammasource. For the first time, the imaging polarization effect has been observed.Furthermore, the detector imaging characteristic that under extreme experimentalconditions are investigated according to the change of the physical parameters like tubevoltage, tube current, et.al. For the penetrated study of the polarization phenomenon, weestablish two kinds of models with analytic method and finite element method based onthe Poisson equation. Thus, the inner electric potential, the electric field distribution andthe space charge density of pixellated CdZnTe detector are simulated. The simulationresults reveal that the accumulation of the hole carriers, which resulted from theextremely low drift ability of the hole carrier, leads to a relatively highspace-charge-density area in the CdZnTe bulk when the increase of irradiated photonflux. And hence, the induced signal screen effect of the anode pixels in the centerirradiated area is mainly attributed to the distorted electric field which makes electroncarriers drifting toward the high potential area in the CdZnTe crystal instead of the pixelanodes. Particularly, the finite model predicts the fluctuant change of the polarizationeffect, which has been approved during our experiments. The detailed discussion has been presented with the increase of the incident photon energy in the finite elementmodel.
引文
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