One-dimensional π-d conjugated coordination polymers: synthesis and their improved memory performance

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英文篇名：One-dimensional π-d conjugated coordination polymers: synthesis and their improved memory performance 作者：Xue-Feng ; Cheng ; Jie ; Li ; Xiang ; Hou ; Jin ; Zhou ; Jing-Hui ; He ; Hua ; Li ; Qing-Feng ; Xu ; Na-Jun ; Li ; Dong-Yun ; Chen ; Jian-Mei ; Lu 英文作者：Xue-Feng Cheng;Jie Li;Xiang Hou;Jin Zhou;Jing-Hui He;Hua Li;Qing-Feng Xu;Na-Jun Li;Dong-Yun Chen;Jian-Mei Lu;College of Chemistry, Chemical Engineering and Materials Science, Soochow University;Shanghai Institute of Measurement and Testing Technology; 英文关键词：one-dimensional coordination polymer;;resistive random access memory;;ternary device yield;;low threshold voltages;;d-π conjugation 中文刊名：Science China(Chemistry) 英文刊名：中国科学:化学(英文版) 机构：College of Chemistry, Chemical Engineering and Materials Science, Soochow University;Shanghai Institute of Measurement and Testing Technology; 出版日期：2019-03-29 14:43 出版单位：Science China(Chemistry) 年：2019 期：06 基金：supported by the National Natural Science Foundation of China (21603158, 21336005);; the Major Research Project of Natural Scientific Research Foundation of the Higher Education Institutions in Jiangsu Province (15KJA150008, 17KJA150010);; Suzhou Science and Technology Bureau Project (SYG201524);; the Priority Academic Program Development of Jiangsu Higher Education Institutions 语种：英文; 页：107-114 页数：8 CN：11-5839/O6 ISSN：1674-7291 分类号：O641.4

摘要

Multilevel resistance random access memories(RRAMs) are intensively studied due to their potential applications in high density information storage. However, the low ternary device yields and high threshold voltages based on current materials cannot meet the requirement for applications. Improvement via material innovation remains desirable and challenging. Herein,five one-dimensional conjugated coordination polymers were synthesized via the reaction between metal ions(Zn~(2+), Cu~(2+), Ni~(2+),Pt~(2+) and Pd~(2+)) and 2,5-diaminobenzene-1,4-dithiol(DABDT) and fabricated into RRAM devices. The as-fabricated ternary memories have relatively low threshold voltages(V_(th1):-1 to-1.4 V, V_(th2):-1.8 to-2.2 V). Their ternary device yields were improved from 24% to 56%. The first and the second resistance switches are interpreted by the space charge limited current(SCLC) and grain boundary depletion limited current(GBLC) modes, respectively. The Pd-DABDT, which is of planar structure,smaller band gap and better crystallinity than others, shows the best performance among these five polymers. Our work paves a simple and efficient way to optimize the performance of ternary RRAM devices employing one-dimensional hybrid materials.
        Multilevel resistance random access memories(RRAMs) are intensively studied due to their potential applications in high density information storage. However, the low ternary device yields and high threshold voltages based on current materials cannot meet the requirement for applications. Improvement via material innovation remains desirable and challenging. Herein,five one-dimensional conjugated coordination polymers were synthesized via the reaction between metal ions(Zn~(2+), Cu~(2+), Ni~(2+),Pt~(2+) and Pd~(2+)) and 2,5-diaminobenzene-1,4-dithiol(DABDT) and fabricated into RRAM devices. The as-fabricated ternary memories have relatively low threshold voltages(V_(th1):-1 to-1.4 V, V_(th2):-1.8 to-2.2 V). Their ternary device yields were improved from 24% to 56%. The first and the second resistance switches are interpreted by the space charge limited current(SCLC) and grain boundary depletion limited current(GBLC) modes, respectively. The Pd-DABDT, which is of planar structure,smaller band gap and better crystallinity than others, shows the best performance among these five polymers. Our work paves a simple and efficient way to optimize the performance of ternary RRAM devices employing one-dimensional hybrid materials.

引文

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