JFET的HPM及EMP损伤效应和机理分析
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摘要
建立了N型结场效应晶体管(JFET)在电磁干扰下的2维电热模型,在栅极分别注入高功率微波(HPM)和强电磁脉冲(EMP)时,对工作在饱和区的JFET晶体管的瞬态响应进行了仿真分析。结果表明,注入HPM时,器件内部的峰值温度呈周期性的"升高-下降-升高"变化规律,在信号工作的正、负周期,器件内部峰值温度均呈上升趋势,在器件的栅极和源极出现了2个烧毁点;注入EMP时,器件内部峰值温度上升呈"快速-缓慢-急剧"的变化趋势,易损伤部位出现在源极下方近栅极处,损伤机理与注入HPM时的正半周期损伤机理相似。通过拟合分析,分别得到了HPM和EMP注入下,能量损伤阈值和功率损伤阈值随脉宽的变化关系,并通过比较发现,在相同的脉宽下,注入EMP比注入HPM需要更少的能量和功率就可以毁伤器件。
A two-dimensional electrothermal model of N type junction field effect transistor(JFET) under electromagnetic interference is established. The transient behaviors of the JFET working in saturated region are simulated and analyzed when high power microwave(HPM) and electromagnetic pulse(EMP) are injected into the gate, respectively. The results show that the peak temperature variation has a periodic rule of " rising-falling-rising" and the temperature rise occurs in both positive and negative half-periods during the different signal time periods, and there are two burn-out points appearing at the gate and the source when HPM signals are injected into the device.When the device is injected by EMP, the rising rate of peak temperature shows a " fast, slow and sharp" trend with the increase of time and the vulnerable parts appear below the source(near the gate), the damage mechanism is similar to that of HPM injection. Finally, the dependence relations of damage energy and damage power of EMPs and HPMs on pulse-width are obtained in a nanosecond range. It is found that with the same pulse-width, EMP injection requires less energy and power to destroy the device than that of HPM injection
A two-dimensional electrothermal model of N type junction field effect transistor(JFET) under electromagnetic interference is established. The transient behaviors of the JFET working in saturated region are simulated and analyzed when high power microwave(HPM) and electromagnetic pulse(EMP) are injected into the gate, respectively. The results show that the peak temperature variation has a periodic rule of " rising-falling-rising" and the temperature rise occurs in both positive and negative half-periods during the different signal time periods, and there are two burn-out points appearing at the gate and the source when HPM signals are injected into the device.When the device is injected by EMP, the rising rate of peak temperature shows a " fast, slow and sharp" trend with the increase of time and the vulnerable parts appear below the source(near the gate), the damage mechanism is similar to that of HPM injection. Finally, the dependence relations of damage energy and damage power of EMPs and HPMs on pulse-width are obtained in a nanosecond range. It is found that with the same pulse-width, EMP injection requires less energy and power to destroy the device than that of HPM injection
引文
[1] BACKSTROM M G,LOVSTRAND K G.Susceptibility of electronic systems to high-power microwaves:Summary of test experience[J].IEEE Trans Electromagn Compat,2004,46(3) :396-403.
[2] XI X W,CHAI C C,REN X R,et al.Influence of the external component on the damage of the bipolar transistor induced by the electromagnetic pulse[J].Journal of Semiconductors,2010,31(7):074009.
[3] 周怀安,杜正伟,龚克.双极型晶体管在强电磁脉冲作用下的瞬态响应[J].强激光与粒子束,2005,17(12):1 861-1 864.( ZHOU Huai-an,DU Zheng-wei,GONG Ke.Transient response of bipolar junction transistor under intense electromagnetic pulse[J].High Power Laser and Particle Beams,2005,17(12):1 861-1 864.)
[4] MA Z Y,CHAI C C,REN X R,et al.Microwave damage susceptibility trend of a bipolar transistor as a function of frequency[J].Chin Phys B,2012,21(9):098502.
[5] 范菊平,张玲,贾新章.双极型晶体管高功率微波的损伤机理[J].强激光与粒子束,2010,22(6):1 319-1 322.(FAN Ju-ping,ZHANG Ling,JIA Xin-zhang.HPM damage mechanism on bipolar transistors[J].High Power Laser and Particle Beams,2010,22(6):1 319-1 322.)
[6] 任兴荣,柴常春,马振洋.基极注入强电磁脉冲对双极晶体管的损伤效应和机理[J].物理学报,2013,62(6):068501.(REN Xing-rong,CHAI Chang-chun,MA Zhen-yang.The damage effect and mechanism of bipolar transistors induced by injection of electromagnetic pulse from the base[J].Acta Phys Sin,2013,62(6):068501.)
[7] LIU Y,CHAI C C,YANG Y T.Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave[J].Chin Phys B,2016,25(4):048504.
[8] YU X H,CHAI C C,LIU Y,et al.Analysis of high power microwave induced degradation and damage effects in AlGaAs/InGaAs pHEMTs[J].Microelectronics Reliability,2015,55(8):1 174-1 179.
[9] 张存波,王弘刚,张建德.高电子迁移率晶体管微波损伤仿真与实验研究[J].强激光与粒子束,2014,26(6):063014.(ZHANG Cun-bo,WANG Hong-gang,ZHANG Jian-de.Simulation and experiment research on high electron mobility transistor microwave damage[J].High Power Laser and Particle Beams,2014,26(6):063014.)
[10] KIM K,ILIADIS A A.Latch-up effects in CMOS inverters due to high power pulsed electromagnetic interference[J].Solid-State Electronics,2008,52(10):1 589-1 593.
[11] KIM K,ILIADIS A A.Operational upsets and critical new bit errors in CMOS digital inverters due to high power pulsed electromagnetic interference[J].Solid-State Electronics,2010,54(1):18-21.
[12] 刘恩科,朱秉升,罗晋生.半导体物理学[M].7版.北京:电子工业出版社,2008.(LIU En-ke,ZHU Bing-sheng,LUO Jin-sheng.Semiconductor Physics[M].7th ed.Beijing:Electronic Industry Press,2008.)
[13] Integrated Systems Engineering Corp.Dessis simulation user’s manual[R].2004 ISE-TCAD.Zurich:Integrated Systems Engineering Corp,2004.
[14] CANALI C,MAJNI G,MINDER R,et al.Electron and hole drift velocity-measurements in silicon and their empirical relation to electric-field and temperature[J].IEEE Trans Electron Dev,1975,22(11):1 045-1 047.
[15] RADASKY W A.Protection of commercial installations from the high-fequency electromagnetic threats of HEMP and IEMI using IEC standards[C]//Asia-Pacific Symposium on Electromagnetic Compatibility,2010:758-761.
[16] WUNSCH D C.BELL R R.Determination of threshold failure levels of semiconductor diodes and transistors due to pulse voltages[J].IEEE Trans Nucl Sci,1968,15(6):244-259.
[17] TASCA D M.Pulse power failure modes in semiconductors[J].IEEE Trans Nucl Sci,1970,17(6):364-372.
[2] XI X W,CHAI C C,REN X R,et al.Influence of the external component on the damage of the bipolar transistor induced by the electromagnetic pulse[J].Journal of Semiconductors,2010,31(7):074009.
[3] 周怀安,杜正伟,龚克.双极型晶体管在强电磁脉冲作用下的瞬态响应[J].强激光与粒子束,2005,17(12):1 861-1 864.( ZHOU Huai-an,DU Zheng-wei,GONG Ke.Transient response of bipolar junction transistor under intense electromagnetic pulse[J].High Power Laser and Particle Beams,2005,17(12):1 861-1 864.)
[4] MA Z Y,CHAI C C,REN X R,et al.Microwave damage susceptibility trend of a bipolar transistor as a function of frequency[J].Chin Phys B,2012,21(9):098502.
[5] 范菊平,张玲,贾新章.双极型晶体管高功率微波的损伤机理[J].强激光与粒子束,2010,22(6):1 319-1 322.(FAN Ju-ping,ZHANG Ling,JIA Xin-zhang.HPM damage mechanism on bipolar transistors[J].High Power Laser and Particle Beams,2010,22(6):1 319-1 322.)
[6] 任兴荣,柴常春,马振洋.基极注入强电磁脉冲对双极晶体管的损伤效应和机理[J].物理学报,2013,62(6):068501.(REN Xing-rong,CHAI Chang-chun,MA Zhen-yang.The damage effect and mechanism of bipolar transistors induced by injection of electromagnetic pulse from the base[J].Acta Phys Sin,2013,62(6):068501.)
[7] LIU Y,CHAI C C,YANG Y T.Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave[J].Chin Phys B,2016,25(4):048504.
[8] YU X H,CHAI C C,LIU Y,et al.Analysis of high power microwave induced degradation and damage effects in AlGaAs/InGaAs pHEMTs[J].Microelectronics Reliability,2015,55(8):1 174-1 179.
[9] 张存波,王弘刚,张建德.高电子迁移率晶体管微波损伤仿真与实验研究[J].强激光与粒子束,2014,26(6):063014.(ZHANG Cun-bo,WANG Hong-gang,ZHANG Jian-de.Simulation and experiment research on high electron mobility transistor microwave damage[J].High Power Laser and Particle Beams,2014,26(6):063014.)
[10] KIM K,ILIADIS A A.Latch-up effects in CMOS inverters due to high power pulsed electromagnetic interference[J].Solid-State Electronics,2008,52(10):1 589-1 593.
[11] KIM K,ILIADIS A A.Operational upsets and critical new bit errors in CMOS digital inverters due to high power pulsed electromagnetic interference[J].Solid-State Electronics,2010,54(1):18-21.
[12] 刘恩科,朱秉升,罗晋生.半导体物理学[M].7版.北京:电子工业出版社,2008.(LIU En-ke,ZHU Bing-sheng,LUO Jin-sheng.Semiconductor Physics[M].7th ed.Beijing:Electronic Industry Press,2008.)
[13] Integrated Systems Engineering Corp.Dessis simulation user’s manual[R].2004 ISE-TCAD.Zurich:Integrated Systems Engineering Corp,2004.
[14] CANALI C,MAJNI G,MINDER R,et al.Electron and hole drift velocity-measurements in silicon and their empirical relation to electric-field and temperature[J].IEEE Trans Electron Dev,1975,22(11):1 045-1 047.
[15] RADASKY W A.Protection of commercial installations from the high-fequency electromagnetic threats of HEMP and IEMI using IEC standards[C]//Asia-Pacific Symposium on Electromagnetic Compatibility,2010:758-761.
[16] WUNSCH D C.BELL R R.Determination of threshold failure levels of semiconductor diodes and transistors due to pulse voltages[J].IEEE Trans Nucl Sci,1968,15(6):244-259.
[17] TASCA D M.Pulse power failure modes in semiconductors[J].IEEE Trans Nucl Sci,1970,17(6):364-372.
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