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SpringerLink电子期刊(10)

在“SpringerLink电子期刊”中，命中：10条，耗时：0.0769661 秒

在所有数据库中总计命中：11条

1. Temperature dependence of diffusion length in MCT epitaxial layers

作者： I. A. Nikiforov ; A. V. Nikonov ; K. O. Boltar…

关键词：MCT ; infrared range ; heteroepitaxial structures ; minority charge carriers ; diffusion length

刊名：Journal of Communications Technology and Electronics

出版年：2016

2. Focal plane arrays mesastructures formation by ion-beam etching

作者： M. V. Sednev ; K. O. Boltar ; Yu. P. Sharonov…

关键词：FPA ; ion ; beam etching ; heteroepitaxial structures ; microphotoelectronics

刊名：Journal of Communications Technology and Electronics

出版年：2016

3. Characteristics of heteroepitaxial structures Al x Ga1᾿em>x N for p᾿em>i᾿em cl

作者： D. V. Smirnov ; K. O. Boltar ; M. V. Sednev…

关键词：Al x Ga1–x N for p–i–n ; GaN ; heteroepitaxial structures ; p–i–n diode ; ion ; beam etching ; visible ; blind subband ; solar ; blind subband ; absorption (transmission) edge

刊名：Journal of Communications Technology and Electronics

出版年：2016

4. 320 × 256 avalanche array photodetector on the basis of ternary alloys of the A3B5 group with an InGaAs absorbing layer and an InAlAs barrier layer

作者： N. I. Iakovleva ; K. O. Boltar ; M. V. Sedneva…

关键词：InGaAs ; short ; wavelength infrared band ; infrared ; nanoheterostructure ; avalanche photodiode ; matrix of photosensitive elements ; avalanche photodetector

刊名：Journal of Communications Technology and Electronics

出版年：2016

5. Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures

作者： N. I. Iakovleva ; K. O. Boltar ; M. V. Sednev…

关键词：InGaAs ; InP ; short ; wavelength infrared band ; heteroepitaxial structures ; avalanche PIN photodiode ; array of photosensitive elements ; photoreceiver

刊名：Journal of Communications Technology and Electronics

出版年：2016

6. Solid-state photoelectronics of the ultraviolet range (Review)

作者： K. O. Boltar ; I. D. Burlakov…

关键词：ultraviolet ; solar blind ; visible blind ; solid solution

刊名：Journal of Communications Technology and Electronics

出版年：2016

7. Investigation of planar photodiodes of a focal plane array based on a heteroepitaxial InGaAs/InP structure

作者： D. S. Andreev ; K. O. Boltar ; P. V. Vlasov…

关键词：dark currents ; planar ; photodiodes based on a heteroepitaxial InGaAs/InP structure ; FPA

刊名：Journal of Communications Technology and Electronics

出版年：2016

8. Volatile compounds in Nanos cheese: their formation during ripening and sesonal variation

作者： I. Boltar ; A. ?an?ek Majheni? ; K. Jarni ; T. Jug…

关键词：Cheese ; Volatile compounds ; Ripening ; Season ; Feed

刊名：Journal of Food Science and Technology

出版年：2015

9. Erratum to: Volatile compounds in Nanos cheese: Their formation during ripening and seasonal variation

作者： I. Boltar ; A. ?an?ek Majheni? ; K. Jarni ; T. Jug…

刊名：Journal of Food Science and Technology

出版年：2015

10. An Investigation into the Effect of High-Power Pulse IR Radiation on the Properties of Surfaces of CdxHg1–хTe Heteroepitaxial Layers

作者：K. O. Boltar’ (1)
I. D. Burlakov (1)
А. V. Voitsekhovskii (2)
А. L. Sizov (1)
V. G. Sredin (3)
N. Kh. Talipov (3)
S. А. Shul’ga (2)

关键词：heteroepitaxial layers ; CdHgTe ; radiation ; induced defects ; laser irradiation

刊名：Russian Physics Journal

出版年：2013

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