搜索页_+A2.+Cz+silicon

设为首页

收藏本站

网站地图 | English | 公务邮箱

远程访问

NSTL服务站

外文资源

Elsevier电子期刊(103)

在“Elsevier电子期刊”中，命中：103条，耗时：0.023022 秒

在所有数据库中总计命中：105条

1.Characterization of the loss of the dislocation-free growth during Czochralski silicon pulling

作者：Adeline Lanterne^a ; ^{adeline.lanterne@ntnu.no} ; Guilherme Gaspar^a ; Yu Hu^b ; Eivind Ø ; vrelid^c ; Marisa Di Sabatino^a

关键词：A2. Czochralski method ; B2. Semiconducting silicon ; A1. Dislocations ; B3. Solar cells

刊名：Journal of Crystal Growth

出版年：2017

2.Control of heat transfer in continuous-feeding Czochralski-silicon crystal growth with a water-cooled jacket

作者：Wenhan Zhao ; Lijun Liu ; ^{ljliu@mail.xjtu.edu.cn}

关键词：A1. Computer simulation ; A2. Continuous-feeding Czochralski method ; A1. Heat transfer enhancement ; B2. Semiconducting silicon ; A1. Stresses

刊名：Journal of Crystal Growth

出版年：2017

3.Scale up aspects of directional solidification and Czochralski silicon growth processes in traveling magnetic fields

作者：Natasha Dropka ; ^{natascha.dropka@ikz-berlin.de" class="auth_mail" title="E-mail the corresponding author} ; Torunn Ervik¹ ; Matthias Czupalla ; Frank M. Kiessling

关键词：A1. Computer simulation ; A1. Fluid flows ; A1. Magnetic fields ; A1. Directional solidification ; A1. Stirring ; B2. Semiconducting silicon ; A2. Magnetic field assisted Czochralski method

刊名：Journal of Crystal Growth

出版年：2016

4.Lifetime improvement of photovoltaic silicon crystals grown by Czochralski technique using “liquinert” quartz crucibles

关键词：A2. Czocharlski method ; B2. Semiconducting silicon ; B3. Solar cells

刊名：Journal of Crystal Growth

出版年：2016

5.Investigations of interstitial generations near growth interface depending on crystal pulling rates during CZ silicon growth by detaching from the melt

作者：T. Abe^a ; ^{takao.abe@seh.jp" class="auth_mail" title="E-mail the corresponding author} ; T. Takahashi^a ; K. Shirai^b ; X.W. Zhang^c

关键词：A1. Vacancies ; A1. Interstitials ; A1. Thermal gradient ; A1. Voids ; A1. Dislocation-loops ; A2. Growth from melt

刊名：Journal of Crystal Growth

出版年：2016

6.Observations of secondary defects and vacancies in CZ silicon crystals detached from melt using four different types of characterization technique

作者：T. Abe^a ; ^{takao.abe@seh.jp" class="auth_mail" title="E-mail the corresponding author} ; T. Takahashi^a ; K. Shirai^b

关键词：A1.Vacancies ; A1.Interstitials ; A1.Thermal gradient ; A1.Voids ; A1.Dislocation-loops ; A2.Growth from melt

刊名：Journal of Crystal Growth

出版年：2016

7.Effect of ramping on oxygen precipitates and Cu-vacancy complex in Czochralski silicon

作者：Jin Xu^a ; ^b ; ^c ; ^{xujinmse@xmu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Yaochao Lv^a ; Weibin Guo^a ; Tingting Xie^a

关键词：A1. Impurities ; A1. Radiation ; A2. Defects ; B2. Semiconducting materials

刊名：Journal of Crystal Growth

出版年：2016

8.Temperature-dependent Hall effect measurements on Cz-grown silicon pulled from compensated and recycled feedstock materials

作者：Song Zhang ; ^{songz@material.ntnu.no" class="auth_mail" title="E-mail the corresponding author} ; Chiara Modanese ; Marisa Di Sabatino ; Gabriella Tranell

关键词：A1. As-grown defects ; A1. Compensation ; A1. Carrier mobility ; A1. Hall effect ; A2. Cz silicon

刊名：Journal of Crystal Growth

出版年：2015

9.Advanced chemical model for analysis of Cz and DS Si-crystal growth

作者：A.N. Vorob鈥檈v ; A.P. Sid鈥檏o ; V.V. Kalaev

关键词：A1. Directional solidification ; A1. Impurities ; A2. Growth from melt ; A2. Czochralski method ; B2. Semiconducting silicon

刊名：Journal of Crystal Growth

出版年：15 January, 2014

10.Dependence of nickel gettering on crystalline nature in as-grown Czochralski silicon wafer

作者：In-Ji Lee^a ; ^{injilee@gmail.com} ; Ungyu Paik^b ; ^{upaik@hanyang.ac.kr} ; Jea-Gun Park^c ; ^{parkjgL@hanyang.ac.kr} ; ^{parkjgL@hanmail.net}

关键词：A1. Defects ; A1. Impurities ; A1. Point defects ; A2. Czochralski method ; A2. Single crystal growth ; B2. Semiconducting silicon

刊名：Journal of Crystal Growth

出版年：2013

按检索点细分(103)

关键词(2)

文摘(2)

按出版年细分(103)

2017年(2)

2016年(5)

2015年(1)

2013年(5)

2012年(2)

2011年(9)

2010年(4)

2009年(2)

2008年(5)

2007年(11)

2006年(10)

2005年(1)

2004年(18)

2003年(8)

2002年(8)

2001年(9)

2000年及以前(3)

地址：北京市海淀区学院路29号邮编：100083

电话：办公室：(+86 10)66554848；文献借阅、咨询服务、科技查新：66554700